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Specific features of the recombination loss of the photocurrent in n-TiN/p-Si anisotype heterojunctions

  • Physics of Semiconductor Devices
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Abstract

Photosensitive n-TiN/p-Si heterostructures are fabricated by reactive magnetron sputtering. The heterostructures generate an open-circuit voltage of V oc = 0.4 V and a short-circuit current of I sc = 1.36 mA/cm2 under illumination at 80 mW/cm2. An analysis of the light current-voltage characteristic and quantum-yield spectrum demonstrate that the poor photoelectric parameters are due to recombination in the base region of the heterojunction and to the formation of a high-resistivity SiO2 layer on the surface of polycrystalline silicon, which fails to provide high-quality passivation of surface states.

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Authors and Affiliations

  1. Yuriy Fedkovych Chernivtsi National University, Chernivtsi, 58012, Ukraine

    M. N. Solovan, V. V. Brus & P. D. Maryanchuk

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  1. M. N. Solovan
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  2. V. V. Brus
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  3. P. D. Maryanchuk
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Correspondence to M. N. Solovan.

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Original Russian Text © M.N. Solovan, V.V. Brus, P.D. Maryanchuk, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 11, pp. 1540–1542.

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Solovan, M.N., Brus, V.V. & Maryanchuk, P.D. Specific features of the recombination loss of the photocurrent in n-TiN/p-Si anisotype heterojunctions. Semiconductors 48, 1504–1506 (2014). https://doi.org/10.1134/S106378261411027X

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  • DOI: https://doi.org/10.1134/S106378261411027X

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