1. Physics of switching and memory effects in chalcogenide glassy semiconductors

   • N. A. Bogoslovskiy
   • K. D. Tsendin

   Review 06 May 2012 Pages: 559 - 590

2. Phase transitions in thin Ge₂Sb₂Te₅ chalcogenide films according to Raman spectroscopy data

   • A. P. Avachev
   • S. P. Vikhrov
   • E. I. Terukov

   Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 06 May 2012 Pages: 591 - 594

3. Electrophysical properties of solid solutions of silver in PbTe

   • M. K. Sharov

   Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 06 May 2012 Pages: 595 - 597

4. Effect of charged dislocation walls on mobility in GaN epitaxial layers

   • S. E. Krasavin

   Electronic Properties of Semiconductors 06 May 2012 Pages: 598 - 601

5. Thermal expansion of CuIn₅S₈ single crystals and the temperature dependence of their band gap

   • I. V. Bodnar

   Electronic Properties of Semiconductors 06 May 2012 Pages: 602 - 605

6. Mössbauer and magnetic studies of the ternary compound FeIn₂Se₄

   • I. V. Bodnar
   • S. A. Pauliukavets
   • Yu. A. Fedotova

   Electronic Properties of Semiconductors 06 May 2012 Pages: 606 - 610

7. Formation and annealing of radiation defects in tin-doped p-type germanium crystals

   • V. V. Litvinov
   • A. N. Petukh
   • S. B. Lastovskii

   Electronic Properties of Semiconductors 06 May 2012 Pages: 611 - 614

8. CdSe semiconducting layers produced by pulse electrolysis

   • C. Mitzithra
   • S. Hamilakis
   • Z. Loizos

   Electronic Properties of Semiconductors 06 May 2012 Pages: 615 - 618

9. Experimental evaluation of the carrier lifetime in GaAs grown at low temperature

   • A. A. Pastor
   • P. Yu. Serdobintsev
   • V. V. Chaldyshev

   Electronic Properties of Semiconductors 06 May 2012 Pages: 619 - 621

10. Long-range effect of the irradiation of silicon with light on the Schottky-barrier photovoltage

    • D. I. Tetelbaum
    • S. V. Tikhov
    • Yu. A. Mendeleva

    Surfaces, Interfaces, and Thin Films 06 May 2012 Pages: 622 - 624

11. Exciton photoluminescence and energy in a percolation cluster of ZnSe quantum dots as a fractal object

    • N. V. Bondar
    • M. S. Brodyn

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 May 2012 Pages: 625 - 630

12. Transport properties of InGaAs/GaAs Heterostructures with δ-doped quantum wells

    • N. V. Baidus
    • V. V. Vainberg
    • O. G. Sarbey

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 May 2012 Pages: 631 - 636

13. Luminescence of CdMnTe/CdMgTe structures with periodically arranged narrow-gap inclusions

    • V. F. Agekyan
    • G. Karczewski
    • N. G. Filosofov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 May 2012 Pages: 637 - 640

14. Measurement of Young’s modulus of GaAs nanowires growing obliquely on a substrate

    • P. A. Alekseev
    • M. S. Dunaevskii
    • A. N. Titkov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 May 2012 Pages: 641 - 646

15. Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si_{1 − x} Ge _x buffer layers

    • V. V. Strelchuk
    • A. S. Nikolenko
    • A. V. Novikov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 May 2012 Pages: 647 - 654

16. Mechanism of terahertz photoconductivity in semimetallic HgTe/CdHgTe quantum wells

    • Yu. B. Vasilyev
    • N. N. Mikhailov
    • G. Nachtwei

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 May 2012 Pages: 655 - 658

17. Thermoelectric figure of merit for bulk nanostructured composites with distributed parameters

    • A. A. Snarskii
    • A. K. Sarychev
    • A. N. Lagarkov

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 06 May 2012 Pages: 659 - 665

18. Effect of a bichromatic electric field on the current-voltage characteristic of a graphene-based superlattice

    • S. V. Kryuchkov
    • E. I. Kuhar

    Carbon Systems 06 May 2012 Pages: 666 - 672

19. Nonlinear thermal model of a heterojunction-based light-emitting diode

    • V. A. Sergeev
    • A. M. Hodakov

    Physics of Semiconductor Devices 06 May 2012 Pages: 673 - 677

20. Silicon field-effect transistors as radiation detectors for the Sub-THz range

    • D. B. But
    • O. G. Golenkov
    • S. G. Bunchuk

    Physics of Semiconductor Devices 06 May 2012 Pages: 678 - 683

21. Influence of inhomogeneous broadening and deliberately introduced disorder on the width of the lasing spectrum of a quantum dot laser

    • V. V. Korenev
    • A. V. Savelyev
    • M. V. Maximov

    Physics of Semiconductor Devices 06 May 2012 Pages: 684 - 689

22. Front surface illuminated InAsSb photodiodes (long-wavelength cutoff λ_0.1 = 4.5 μm) operating at temperatures of 25–80°C

    • N. D. Il’inskaya
    • A. L. Zakgeim
    • A. E. Chernyakov

    Physics of Semiconductor Devices 06 May 2012 Pages: 690 - 695

23. Effect of the Cu content and ZnS treatment on the characteristics of synthesized ZnS:(Cu, Cl) electroluminescent phosphors

    • M. M. Sychov
    • K. A. Ogurtsov
    • A. S. Kozlov

    Fabrication, Treatment, and Testing of Materials and Structures 06 May 2012 Pages: 696 - 700