Abstract
The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50–100 meV deep and impurity δ-layers in the wells, with concentrations in the range 1011 < N s < 1012 cm−2, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.
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Original Russian Text © N.V. Baidus, V.V. Vainberg, B.N. Zvonkov, A.S. Pylypchuk, V.N. Poroshin, O.G. Sarbey, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 5, pp. 649–654.
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Baidus, N.V., Vainberg, V.V., Zvonkov, B.N. et al. Transport properties of InGaAs/GaAs Heterostructures with δ-doped quantum wells. Semiconductors 46, 631–636 (2012). https://doi.org/10.1134/S1063782612050053
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DOI: https://doi.org/10.1134/S1063782612050053