1. Coherent phase equilibria in the Zn-Cd-Te system and liquid-phase epitaxy of elastically strained Zn _x Cd_{1 − x} Te alloy layers

   • P. P. Moskvin
   • L. V. Rashkovetskii
   • V. A. Moshnikov

   Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 08 July 2011 Pages: 837 - 844

2. Thermoelectric properties of BiTeI with addition of BiI₃, CuI, and overstoichiometric Bi

   • V. A. Kulbachinskii
   • V. G. Kytin
   • A. V. Shevelkov

   Electronic Properties of Semiconductors 08 July 2011 Pages: 845 - 849

3. Features of a priori heavy doping of the n-TiNiSn intermetallic semiconductor

   • V. A. Romaka
   • P. Rogl
   • S. M. Budgerak

   Electronic Properties of Semiconductors 08 July 2011 Pages: 850 - 856

4. Transient spectroscopy of Ryvkin’s α centers

   • A. P. Odrinsky

   Electronic Properties of Semiconductors 08 July 2011 Pages: 857 - 860

5. Magnetic properties of the FeIn₂S₄ ternary-compound crystals

   • I. V. Bodnar
   • S. V. Trukhanov

   Electronic Properties of Semiconductors 08 July 2011 Pages: 861 - 864

6. Deep electron levels in undoped polycrystalline CdTe annealed in liquid Cd

   • E. A. Bobrova
   • Y. V. Klevkov

   Electronic Properties of Semiconductors 08 July 2011 Pages: 865 - 871

7. Photoluminescence of Hg_{1 − x} Cd _x Te based heterostructures grown by molecular-beam epitaxy

   • K. D. Mynbaev
   • N. L. Bazhenov
   • Yu. G. Sidorov

   Spectroscopy, Interaction with Radiation 08 July 2011 Pages: 872 - 879

8. Photoluminescence of CdTe grown in conditions considerably deviating from thermodynamic equilibrium

   • V. S. Bagaev
   • Yu. V. Klevkov
   • A. A. Shepel

   Spectroscopy, Interaction with Radiation 08 July 2011 Pages: 880 - 887

9. The effect of morphology and surface composition on radiation resistance of heterogeneous material CdS-PbS

   • I. V. Malyar
   • S. V. Stetsyura

   Surfaces, Interfaces, and Thin Films 08 July 2011 Pages: 888 - 893

10. Dependence of conductivity of an illuminated nonideal heterojunction on external bias

    • V. A. Borschak
    • V. A. Smyntyna
    • N. P. Zatovskaya

    Surfaces, Interfaces, and Thin Films 08 July 2011 Pages: 894 - 899

11. Longitudinal conductivity of layered charge-ordered crystals in a high quantizing magnetic field

    • P. V. Gorskyi

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 08 July 2011 Pages: 900 - 906

12. Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

    • A. B. Talochkin
    • I. B. Chistokhin

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 08 July 2011 Pages: 907 - 911

13. Quaternary (FeIn₂S₄) _x (MnIn₂S₄)_{1 − x} alloys and photosensitive structures on their basis

    • I. V. Bodnar
    • V. Yu. Rud
    • D. V. Lozhkin

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 08 July 2011 Pages: 912 - 916

14. Effect of localization in quantum wells and quantum wires on heavy-light hole mixing and acceptor binding energy

    • M. A. Semina
    • R. A. Suris

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 08 July 2011 Pages: 917 - 925

15. Defects in the crystal structure of Cd _x Hg_{1 − x} Te layers grown on the Si (310) substrates

    • M. V. Yakushev
    • A. K. Gutakovsky
    • Yu. G. Sidorov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 08 July 2011 Pages: 926 - 934

16. Effect of photovoltage on current flow in metal-semiconductor schottky-barrier contacts

    • N. A. Torkhov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 08 July 2011 Pages: 935 - 943

17. Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide

    • E. I. Goldman
    • N. F. Kukharskaya
    • G. V. Chucheva

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 08 July 2011 Pages: 944 - 949

18. Terbium luminescence in alumina xerogel fabricated in porous anodic alumina matrix under various excitation conditions

    • N. V. Gaponenko
    • V. S. Kortov
    • S. Ya. Prislopski

    Amorphous, Vitreous, and Organic Semiconductors 08 July 2011 Pages: 950 - 953

19. Electrical and photoelectric properties of nanostructures obtained by electroless etching of silicon

    • D. I. Bilenko
    • V. V. Galushka
    • E. I. Hasina

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 08 July 2011 Pages: 954 - 957

20. On the thermal stability of graphone

    • A. I. Podlivaev
    • L. A. Openov

    Carbon Systems 08 July 2011 Pages: 958 - 961

21. Effect of AlGaAs-(AlGa) _x O _y pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots

    • N. V. Kryzhanovskaya
    • S. A. Blokhin
    • D. Bimberg

    Physics of Semiconductor Devices 08 July 2011 Pages: 962 - 965

22. Effect of the nonlinear saturation of the gain on the peak modulation frequency in lasers based on self-assembled quantum dots

    • A. E. Zhukov
    • E. M. Arakcheeva
    • A. V. Savelyev

    Physics of Semiconductor Devices 08 July 2011 Pages: 966 - 970