Skip to main content
SpringerLink
Log in

Effect of AlGaAs-(AlGa) x O y pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots

  • Physics of Semiconductor Devices
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

Effect of parameters of the AlGaAs-(AlGa) x O y layer forming the pedestal of a microdisk laser with an active region based on InAs/InGaAs quantum dots on specific features of the emission spectrum at a temperature of 15 K under optical excitation has been studied. A decrease in the oxidation depth of the Al0.97Ga0.03As layer results in a decrease in the intensity of “whispering gallery mode” lines; simultaneously, the lasing threshold becomes higher and the Q factor is diminished by increased leakages into the substrate region.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S. L. McCall, A. F. Levi, R. E. Slusher, S. J. Pearton, and R. A. Logan, Appl. Phys. Lett. 60, 289 (1992).

    Article  ADS  Google Scholar 

  2. N. V. Kryzhanovskaya, S. A. Blokhin, A. G. Gladyshev, N. A. Maleev, A. G. Kuz’menkov, E. M. Arakcheeva, E. M. Tanklevskaya, A. E. Zhukov, A. P. Vasil’ev, E. S. Semenova, M. V. Maksimov, N. N. Ledentsov, V.M. Ustinov, E. Shtok, and D. Bimberg, Fiz. Tekh. Poluprovodn. 40, 1128 (2006) [Semiconductors 40, 1101 (2006)].

    Google Scholar 

  3. E. Peter, I. Sagnes, G. Guirlo, S. Varoutsis, J. Bloch, A. Lemaître, and P. Senellart, Appl. Phys. Lett. 86, 021103 (2005).

    Article  ADS  Google Scholar 

  4. M. Fujita, K. Inoshita, and T. Baba, Electron. Lett. 34, 278 (1998).

    Article  Google Scholar 

  5. Sh. Koseki, B. Zhang, K. De Greve, and Y. Yamamoto, Appl. Phys. Lett. 94, 051110 (2009).

    Article  ADS  Google Scholar 

  6. A. M. Nadtochii, S. A. Blokhin, A. V. Sakharov, M. M. Kulagina, Yu. M. Zadiranov, N. Yu. Gordeev, M. V. Maksimov, V. M. Ustinov, N. N. Ledentsov, E. Shtok, T. Varming, and D. Bimberg, Fiz. Tekh. Poluprovodn. 42, 1247 (2008) [Semiconductors 42, 1228 (2008)].

    Google Scholar 

  7. S. A. Blokhin, A. N. Smirnov, A. V. Sakharov, A. G. Gladyshev, N. V. Kryzhanovskaya, N. A. Maleev, A. E. Zhukov, E. S. Semenova, D. A. Bedarev, E. V. Nikitina, M. M. Kulagina, M. V. Maksimov, N. N. Ledentsov, and V. M. Ustinov, Fiz. Tekh. Poluprovodn. 39, 782 (2005) [Semiconductors 39, 748 (2005)].

    Google Scholar 

  8. Shouyuan Shi, D. W. Prather, L. Yang, and J. Kolodzey, Opt. Eng. 42, 383 (2003).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. St. Petersburg Academic University, Nanotechnology Research and Education Center, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    N. V. Kryzhanovskaya, S. A. Blokhin, M. V. Maximov, A. M. Nadtochy, A. E. Zhukov & K. V. Fedorova

  2. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    N. V. Kryzhanovskaya, S. A. Blokhin, M. V. Maximov, A. M. Nadtochy, A. E. Zhukov, N. N. Ledentsov, V. M. Ustinov & N. D. Il’inskaya

  3. Institut für Festkörperphysik, Technische Universität, D-10623, Berlin, Germany

    N. N. Ledentsov & D. Bimberg

Authors
  1. N. V. Kryzhanovskaya
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. S. A. Blokhin
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. M. V. Maximov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A. M. Nadtochy
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. A. E. Zhukov
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. K. V. Fedorova
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. N. N. Ledentsov
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. V. M. Ustinov
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. N. D. Il’inskaya
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. D. Bimberg
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to N. V. Kryzhanovskaya.

Additional information

Original Russian Text © N.V. Kryzhanovskaya, S.A. Blokhin, M.V. Maximov, A.M. Nadtochy, A.E. Zhukov, K.V. Fedorova, N.N. Ledentsov, V.M. Ustinov, N.D. Il’inskaya, D. Bimberg, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 7, pp. 992–995.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kryzhanovskaya, N.V., Blokhin, S.A., Maximov, M.V. et al. Effect of AlGaAs-(AlGa) x O y pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots. Semiconductors 45, 962–965 (2011). https://doi.org/10.1134/S1063782611070116

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782611070116

Keywords

Search

Navigation