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Defects in the crystal structure of Cd x Hg1 − x Te layers grown on the Si (310) substrates

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

Microstructure of the CdTe (310) and CdHgTe (310) layers grown by molecular-beam epitaxy on Si substrates has been studied by the methods of transmission electron microscopy and selective etching. It is established that formation of antiphase domains in the CdHgTe/CdTe/ZnTe/Si(310) is determined by the conditions of formation of the ZnTe/Si interface. Monodomain layers can be obtained by providing conditions that enhance zinc adsorption. An increase in the growth temperature and in the pressure of Te2 vapors gives rise to antiphase domains and induces an increase in their density to the extent of the growth of poly-crystals. It is found that stacking faults exist in a CdHgTe/Si(310) heterostructure; these defects are anisotropically distributed in the bulk of grown layers. The stacking faults are predominantly located in one (111) plane, which intersects the (310) surface at an angle of 68°. The stacking faults originate at the ZnTe/Si(310) interface. The causes of origination of stacking faults and of their anisotropic distribution are discussed.

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References

  1. R. J. Koestner and H. F. Schaake, J. Vac. Sci. Technol. A 6, 2834 (1988).

    Article  ADS  Google Scholar 

  2. Y. S. Ryu, B. S. Song, T. W. Kang, and T. W. Kim, J. Mater. Sci. 39, 1147 (2008).

    Article  ADS  Google Scholar 

  3. Yu. G. Sidorov, S. A. Dvoretskii, V. S. Varavin, N. N. Mi- khailov, M. V. Yakushev, and I. V. Sabinina, Fiz. Tekh. Poluprovodn. 35, 1092 (2001) [Semiconductors 35, 1045 (2001)].

    Google Scholar 

  4. Yu. G. Sidorov, S. A. Dvoretskii, N. N. Mikhailov, V. S. Varavin, A. P. Antsiferov, and M. V. Yakushev, Optich. Zh. 67(1), 39 (2000).

    Google Scholar 

  5. W. Kern and D. A. Puotinen, RCA Rev. 31, 187 (1970).

    Google Scholar 

  6. D. B. Fenner, D. K. Biegelsen, and R. D. Bringans, J. Appl. Phys. 66, 419 (1989).

    Article  ADS  Google Scholar 

  7. M. Inoue, J. Teramoto, and S. Takayanagi, J. Appl. Phys. 33, 2578 (1962).

    Article  ADS  Google Scholar 

  8. P. Mackett, in Properties of Narrow Gap Cadmium-Based Compounds, Ed. by P. Capper (EMIS Data Review Series, London, 1944), vol. 10, p. 188.

    Google Scholar 

  9. A. K. Gutakovskii, A. V. Katkov, M. I. Katkov, O. P. Pchelyakov, and M. A. Revenko, Pis’ma Zh. Tekh. Fiz. 24(24), 7 (1998) [Tech. Phys. Lett. 24, 949 (1998)].

    Google Scholar 

  10. R. D. Bringans, D. K. Beigelsen, and L.-E. Swartz, Phys. Rev. B 44, 3054 (1991).

    Article  ADS  Google Scholar 

  11. L. A. Almeida, L. Hirsch, M. Martinka, P. R. Boyd, and J. H. Dinan, J. Electron. Mater. 30, 608 (2001).

    Article  ADS  Google Scholar 

  12. D. J. Hall, L. Buckle, N. T. Gordon, J. Giess, J. E. Hails, J. W. Cairns, R. M. Lawrence, A. Graham, R. S. Hall, C. Maltby, and T. Ashle, Appl. Phys. Lett. 85, 2113 (2004).

    Article  ADS  Google Scholar 

  13. M. E. Groenert and J. K. Markunas, J. Electron. Mater. 35, 1287 (2006).

    Article  ADS  Google Scholar 

  14. A. Million, N. K. Dhar, and J. H. Dinan, J. Cryst. Growth 159, 76 (1996).

    Article  ADS  Google Scholar 

  15. R. D. Bringans, D. K. Beigelsen, J. E. Northrup, and L. E. Swartz, Jpn. J. Appl. Phys. 32, 1484 (1983).

    Article  ADS  Google Scholar 

  16. R. D. Bringans, D. K. Beigelsen, L.-E. Swartz, F. A. Ponce, and J. C. Tramontana, Phys. Rev. B 45, 13400 (1992).

    Article  ADS  Google Scholar 

  17. D. N. Pridachin, M. V. Yakushev, Yu. G. Sidorov, and V. A. Shvets, J. Appl. Surf. Sci. 142, 485 (1999).

    Article  ADS  Google Scholar 

  18. M. V. Yakushev, D. V. Brunev, K. N. Romanyuk, A. E. Dolbak, A. S. Deryabin, L. V. Mironova, and Yu. G. Sidorov, Poverkhnost’, No. 2, 41 (2008) [J. Surf. Invest. 2, 114 (2008)].

    Google Scholar 

  19. A. A. Babenko, V. S. Varavin, V. V. Vasil’ev, L. V. Mironova, D. N. Pridachin, V. G. Remesnik, I. V. Sabinina, Yu. G. Sidorov, and A. O. Suslyakov, Prikl. Fiz. 4, 108 (2007).

    Google Scholar 

  20. S. Miwa, L. H. Kuo, K. Kimura, A. Ohtake, T. Yasuda, C. C. Jin, and T. Yao, J. Cryst. Growth 184–185, 41 (1998).

    Google Scholar 

  21. N. Wang, K. K. Fung, and I. K. Sou, Appl. Phys. Lett. 77, 2846 (2000).

    Article  ADS  Google Scholar 

  22. L. H. Kuo, K. Kimura, S. Miwa, T. Yasuda, and T. Yao, J. Electron. Mater. 26(2), 53 (1997).

    Article  ADS  Google Scholar 

  23. Y. Takagi, H. Yonezu, K. Samonji, T. Tsuji, and N. Ohshima, J. Cryst. Growth 187, 42 (1998).

    Article  ADS  Google Scholar 

  24. A. K. Gutakovskii and S. I. Stenin, in Modern Electron Microscopy in Studies of Matter (Nauka, Moscow, 1982), p. 139 [in Russian].

    Google Scholar 

  25. P. D. Brown, G. J. Russell, and J. Woods, J. Appl. Phys. 66, 129 (1989).

    Article  ADS  Google Scholar 

  26. D. N. Pridachin, M. V. Yakushev, Yu. G. Sidorov, and V. A. Shvets, Avtometriya, No. 1, 104 (2005).

  27. M. V. Yakushev, V. A. Shvets, and Yu. G. Sidorov, Avtometriya, No. 3, 20 (2001).

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    M. V. Yakushev, A. K. Gutakovsky, I. V. Sabinina & Yu. G. Sidorov

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  1. M. V. Yakushev
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  2. A. K. Gutakovsky
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  3. I. V. Sabinina
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  4. Yu. G. Sidorov
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Correspondence to M. V. Yakushev.

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Original Russian Text © M.V. Yakushev, A.K. Gutakovsky, I.V. Sabinina, Yu.G. Sidorov, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 7, pp. 956–964.

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Yakushev, M.V., Gutakovsky, A.K., Sabinina, I.V. et al. Defects in the crystal structure of Cd x Hg1 − x Te layers grown on the Si (310) substrates. Semiconductors 45, 926–934 (2011). https://doi.org/10.1134/S1063782611070232

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  • DOI: https://doi.org/10.1134/S1063782611070232

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