1. Fast optical detecting media based on semiconductor nanostructures for recording images obtained using charges of free photocarriers

   • P. G. Kasherininov
   • A. A. Tomasov
   • E. V. Beregulin

   Review 15 February 2011 Pages: 1 - 20

2. Chlorine adsorption on the InAs (001) surface

   • A. V. Bakulin
   • S. V. Eremeev
   • S. E. Kulkova

   Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 15 February 2011 Pages: 21 - 29

3. The influence of γ-ray radiation on electrical properties of CuGaSe₂

   • I. Kasumoglu
   • T. G. Kerimova
   • I. A. Mamedova

   Electronic Properties of Semiconductors 15 February 2011 Pages: 30 - 32

4. Grain boundary related electrical transport in Al-rich Al _x Ga_{1 − x} N layers grown by metal-organic chemical vapor deposition

   • A. Yildiz
   • P. Tasli
   • E. Ozbay

   Electronic Properties of Semiconductors 15 February 2011 Pages: 33 - 36

5. Features of the charge-transport mechanism in layered Bi₂Te₃ single crystals doped with chlorine and terbium

   • N. A. Abdullaev
   • N. M. Abdullaev
   • S. A. Nemov

   Electronic Properties of Semiconductors 15 February 2011 Pages: 37 - 42

6. On the resonant donor level in n-CdTe according to data on electron transport under hydrostatic pressure

   • M. I. Daunov
   • A. S. Kovalev
   • A. B. Magomedov

   Electronic Properties of Semiconductors 15 February 2011 Pages: 43 - 46

7. A thermally induced junction between impurity-conduction and intrinsic-conduction regions

   • M. M. Gadjialiev
   • I. K. Kamilov
   • Z. Sh. Pirmagomedov

   Electronic Properties of Semiconductors 15 February 2011 Pages: 47 - 48

8. Conductivity of Hg₃In₂Te₆ crystals in high electric fields

   • O. G. Grushka
   • S. M. Chupyra
   • I. I. Zabolotsky

   Electronic Properties of Semiconductors 15 February 2011 Pages: 49 - 51

9. Current-voltage characteristics of ZnGa₂Se₄ compound polycrystals

   • B. G. Tagiev
   • O. B. Tagiev
   • S. G. Asadullayeva

   Electronic Properties of Semiconductors 15 February 2011 Pages: 52 - 55

10. The morphology, electron structure, and optical properties of self-assembled silicon nanostructures on the surface of highly oriented pyrolytic graphite

    • A. V. Nezhdanov
    • D. O. Filatov
    • A. V. Ershov

    Surfaces, Interfaces, and Thin Films 15 February 2011 Pages: 56 - 60

11. Measurement of surface recombination velocity and bulk lifetime in Si wafers by the kinetics of excess thermal emission

    • A. V. Zinovchuk
    • A. K. Tkachenko

    Surfaces, Interfaces, and Thin Films 15 February 2011 Pages: 61 - 65

12. On the maximum thickness of the space-charge region of reverse biased p ⁺-n junctions with a positive bevel

    • A. S. Kyureguan

    Surfaces, Interfaces, and Thin Films 15 February 2011 Pages: 66 - 68

13. the effect of the periphery of metal-semiconductor Schottky-barrier contacts on their electrical characteristics

    • N. A. Torkhov
    • V. A. Novikov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 15 February 2011 Pages: 69 - 84

14. On the nature of electroluminescence at 1.5 μm in the breakdown mode of reverse-biased Er-doped silicon p-n-junction structures grown by sublimation molecular beam epitaxy

    • A. V. Kornaukhov
    • A. A. Ezhevskii
    • V. G. Shengurov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 15 February 2011 Pages: 85 - 90

15. Modeling of the hysteretic phenomena in RHEED intensity variation versus temperature for GaAs and InAs surfaces

    • Ákos Nemcsics
    • Jenö Takács

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 15 February 2011 Pages: 91 - 95

16. Type-I semiconductor heterostructures with an indirect-gap conduction band

    • T. S. Shamirzaev

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 15 February 2011 Pages: 96 - 102

17. Temperature-dependent excitonic absorption in long-period multiple In _x Ga_{1 − x} As/GaAs quantum well structures

    • S. A. Vaganov
    • R. P. Seisyan

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 15 February 2011 Pages: 103 - 109

18. Electron-electron interaction and spin-orbit coupling in InAs/AlSb heterostructures with a two-dimensional electron gas

    • V. I. Gavrilenko
    • S. S. Krishtopenko
    • M. Goiran

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 15 February 2011 Pages: 110 - 117

19. Electrical, optical, and mechanical properties of amorphous hydrogenated carbon obtained under various deposition conditions

    • A. A. Babaev
    • S. B. Sultanov
    • E. I. Terukov

    Amorphous, Vitreous, and Organic Semiconductors 15 February 2011 Pages: 118 - 120

20. Influence of dislocations on the process of pore formation in n-InP (111) single crystals

    • Y. A. Suchikova
    • V. V. Kidalov
    • G. A. Sukach

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 15 February 2011 Pages: 121 - 124

21. The effect of thermal annealing on the structure of nanocrystalline zinc sulfide films

    • P. N. Krylov
    • E. A. Romanov
    • I. V. Fedotova

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 15 February 2011 Pages: 125 - 129

22. Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy

    • V. P. Kuznetsov
    • V. B. Shmagin
    • Z. F. Krasilnik

    Fabrication, Treatment, and Testing of Materials and Structures 15 February 2011 Pages: 130 - 133

23. The effect of neutron irradiation and annealing temperature on the electrical properties and lattice constant of epitaxial gallium nitride layers

    • V. M. Boyko
    • S. S. Verevkin
    • V. A. Chevychelov

    Fabrication, Treatment, and Testing of Materials and Structures 15 February 2011 Pages: 134 - 140