Abstract
The effect of electric field and temperature on the conductivity of bulk Hg3In2Te6 crystals is investigated. It is shown that the I–V characteristics in high electric fields are of the S type with the effect of switching into a low-resistance state. The critical voltage of transition from the Ohm law to the exponential dependence of the current (I) on the voltage (U) and the threshold voltage of transition into the region of negative differential resistance dU/dI = s< 0 linearly depend on the sample thickness. The activation energies of conductivity in low and high electric fields are determined. It is established that the superlinear portion of the I–V characteristic with dU/dI > 0 is described by the dependence of the type I = I 0 exp(U/U 0) and caused by the electron transitions from the local centers with the energy level E t = 0.19 eV.
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P. Gorley, Z. Grushka, Ya. Radevych, O. Grushka, and I. Zabolotsky, Proc. SPIE 6796, 67961W (2007).
P. N. Gorley, O. G. Grushka, Z. M. Grushka, and A. I. Malik, in Proceedings of the 8th Conference on Electronic Materials, IUMRS-ICEM (Xi’an, China, 2002), p. 27.
O. G. Grushka and P. N. Gorlei, Perspektivn. Mater., No. 6, 33 (2003).
K. D. Tsendin, E. A. Lebedev, and A. B. Shmel’kin, Fiz. Tverd. Tela 47, 427 (2005) [Phys. Solid State 47, 439 (2005)].
V. B. Sandomirskii, A. A. Sukhanov, and A. G. Zhdan, Zh. Eksp. Teor. Fiz. 58, 1683 (1970) [Sov. Phys. JETP 31, 902 (1970)].
E. A. Lebedev, S. A. Kozyukhin, N. N. Konstantinova, and L. P. Kazakova, Fiz. Tekh. Poluprovodn. 43, 1383 (2009) [Semiconductors 43, 1343 (2009)].
G. Lampert and P. Mark, Injection Currents in Solids (Academic, New York, 1970; Mir, Moscow, 1973).
V. L. Bonch-Bruevich and S. G. Kalashnikov, Semiconductor Physics (Nauka, Moscow, 1977) [in Russian].
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Original Russian Text © O.G. Grushka, S.M. Chupyra, O.M. Myslyuk, S.V. Bilichuk, I.I. Zabolotsky, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 1, pp. 50–52.
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Grushka, O.G., Chupyra, S.M., Myslyuk, O.M. et al. Conductivity of Hg3In2Te6 crystals in high electric fields. Semiconductors 45, 49–51 (2011). https://doi.org/10.1134/S106378261101009X
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DOI: https://doi.org/10.1134/S106378261101009X