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The influence of γ-ray radiation on electrical properties of CuGaSe2

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Abstract

The effect of γ-ray radiation on the conductivity of low-resistivity (1022–104 Ω cm) and high-resistivity (105–107 Ω cm) CuGaSe2 single crystals has been studied in the temperature range 77–330 K. It is found that the resistivity of low-resistivity samples increases as the dose of γ-ray radiation is increased, while the resistivity of high-resistivity samples is practically independent of the radiation dose. It is assumed that a decrease in the conductivity of the low-resistivity samples occurs owing to scattering of free charge carriers at defects (charged centers) formed as a result of irradiation with γ-ray photons. It is found that the dose of the γ-ray irradiation does not affect the temperature dependence of resistivity in the low- and high-resistivity samples in the temperature range 77–300 K.

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Authors and Affiliations

  1. Institute of Physics, National Academy of Sciences of Azerbaijan, Baku, AZ-1143, Azerbaijan

    I. Kasumoglu, T. G. Kerimova & I. A. Mamedova

Authors
  1. I. Kasumoglu
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  2. T. G. Kerimova
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  3. I. A. Mamedova
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Correspondence to T. G. Kerimova.

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Original Russian Text © I. Kasumoglu, T.G. Kerimova, I.A. Mamedova, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 1, pp. 32–33.

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Kasumoglu, I., Kerimova, T.G. & Mamedova, I.A. The influence of γ-ray radiation on electrical properties of CuGaSe2 . Semiconductors 45, 30–32 (2011). https://doi.org/10.1134/S1063782611010118

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  • DOI: https://doi.org/10.1134/S1063782611010118

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