Initial stages of the development of semiconductor electronics in the Soviet union (60 years from the Invention of the Transistor) V. I. Stafeev Review 09 May 2010 Pages: 551 - 557
Optical and dielectric characteristics of the rare-earth metal oxide Lu2O3 S. V. OrdinA. I. Shelykh Electrical and Optical Properties of Semiconductors 09 May 2010 Pages: 558 - 563
Electrical and morphological properties of CdTe films synthesized by the method of molecular deposition V. A. MayorovA. M. YafaysovV. F. Radanstev Electrical and Optical Properties of Semiconductors 09 May 2010 Pages: 564 - 567
Specific features of the luminescence and conductivity of zinc selenide on exposure to X-ray and optical excitation V. Ya. DegodaA. O. Sofienko Electrical and Optical Properties of Semiconductors 09 May 2010 Pages: 568 - 574
The role of underbarrier transitions in processes of annihilation of excess charge carriers in II–VI semiconductors G. F. NovikovE. V. RabenokM. V. Gapanovich Electrical and Optical Properties of Semiconductors 09 May 2010 Pages: 575 - 580
Optical properties of (CuInSe2)1 − x (2MnSe) x alloys I. V. Bodnar Electrical and Optical Properties of Semiconductors 09 May 2010 Pages: 581 - 584
Specific features of conductivity of γ-irradiated TlGaTe2 crystals with nanochain structure R. M. SardarliO. A. SamedovG. R. Safarova Electrical and Optical Properties of Semiconductors 09 May 2010 Pages: 585 - 589
Effect of the periphery of metal-semiconductor contacts with Schottky barriers on their static current-voltage characteristic N. A. Torkhov Semiconductor Structures, Interfaces, and Surfaces 09 May 2010 Pages: 590 - 601
Adsorption of alkali metals and their effect on electronic properties of grain boundaries in bulk of polycrystalline silicon L. O. Olimov Semiconductor Structures, Interfaces, and Surfaces 09 May 2010 Pages: 602 - 604
Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers I. G. AtabaevN. A. MatchanovT. M. Saliev Semiconductor Structures, Interfaces, and Surfaces 09 May 2010 Pages: 605 - 609
Current-voltage characteristics of silicon-doped GaAs nanowhiskers with a protecting AlGaAs coating overgrown with an undoped GaAs layer P. A. DementyevM. S. DunaevskiiA. N. Titkov Low-Dimensional Systems 09 May 2010 Pages: 610 - 615
Persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells V. I. GavrilenkoA. V. IkonnikovK. E. Spirin Low-Dimensional Systems 09 May 2010 Pages: 616 - 622
Study and simulation of magnetic susceptibility of Si and Si0.95Ge0.05 whiskers V. M. TsmotsP. G. LitovchenkoI. P. Ostrovskyy Low-Dimensional Systems 09 May 2010 Pages: 623 - 627
Dependence of the stimulated luminescence threshold in ZnO nanocrystals on their geometric shape A. N. GruzintsevA. N. RedkinC. Barthou Low-Dimensional Systems 09 May 2010 Pages: 628 - 633
Structural features of the photogeneration mechanism of free charge carriers in element-containing polydisalicylidene azomethine series E. L. AleksandrovaA. G. IvanovV. V. Shamanin Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 09 May 2010 Pages: 634 - 641
Optical properties of iron-passivated nanoporous silicon O. Yu. ShevchenkoD. N. GoryachevO. M. Sreseli Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 09 May 2010 Pages: 642 - 646
Some features of photocurrent generation in single- and multibarrier photodiode structures A. V. KarimovD. M. Yodgorova Physics of Semiconductor Devices 09 May 2010 Pages: 647 - 652
Excess leakage currents in high-voltage 4H-SiC Schottky diodes P. A. IvanovI. V. GrekhovO. Yu. Serebrennikova Physics of Semiconductor Devices 09 May 2010 Pages: 653 - 656
Raising the quantum efficiency of AlGaInN flip-chip LEDs by Reactive ion etching of the outer side of SiC substrates I. P. SmirnovaL. K. MarkovM. M. Kulagina Physics of Semiconductor Devices 09 May 2010 Pages: 657 - 660
Temperature delocalization of charge carriers in semiconductor lasers S. O. SlipchenkoI. S. ShashkinI. S. Tarasov Physics of Semiconductor Devices 09 May 2010 Pages: 661 - 666
Features of subthreshold defect formation in CdS and CdS:Cu single crystals subjected to irradiation with X-ray photons G. L. MironchukH. Ye. DavidyukV. Kažukauskas Fabrication, Treatment, and Testing of Materials and Structures 09 May 2010 Pages: 667 - 671
Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors A. N. SemenovYa. V. Terent’evS. V. Ivanov Fabrication, Treatment, and Testing of Materials and Structures 09 May 2010 Pages: 672 - 677
Comparative study of changes in electrical properties of silicon and silicon carbide upon proton irradiation V. V. EmtsevA. M. IvanovN. B. Strokan Fabrication, Treatment, and Testing of Materials and Structures 09 May 2010 Pages: 678 - 684
Luminescent and structural properties of ZnO-Ag films V. S. KhomchenkoV. I. KushnirenkoO. S. Lytvyn Fabrication, Treatment, and Testing of Materials and Structures 09 May 2010 Pages: 685 - 690