Abstract
The high-voltage 4H-SiC Schottky diodes are fabricated with a nickel barrier and a guard system in the form of “floating” planar p-n junctions. The analysis of I–V characteristics measured in a wide temperature range shows that the forward current is caused by thermionic emission; however, the current is “excessive” in the reverse direction. It is assumed that the reverse current flows locally through the points of the penetrating-dislocation outcrop to the Ni-SiC interface. The shape of reverse I–V characteristics makes it possible to conclude that the electron transport is governed by the monopolar-injection mechanism (the space-charge limited current) with participation of capture traps.
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Original Russian Text © P.A. Ivanov, I.V. Grekhov, A.S. Potapov, T.P. Samsonova, N.D. Il’inskaya, O.I. Kon’kov, O.Yu. Serebrennikova, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 5, pp. 680–683.
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Ivanov, P.A., Grekhov, I.V., Potapov, A.S. et al. Excess leakage currents in high-voltage 4H-SiC Schottky diodes. Semiconductors 44, 653–656 (2010). https://doi.org/10.1134/S1063782610050180
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DOI: https://doi.org/10.1134/S1063782610050180