1. Oxygen in Ge:Sn

   • L. I. Khirunenko
   • Yu. V. Pomozov
   • H. Riemann

   Atomic Structure and Nonelectronic Properties of Semiconductors 12 October 2010 Pages: 1253 - 1257

2. Mesoscopic variance of dislocation displacements in semiconductor crystals

   • B. V. Petukhov

   Atomic Structure and Nonelectronic Properties of Semiconductors 12 October 2010 Pages: 1258 - 1262

3. Specific features of intervalley scattering of charge carriers in n-Si at high temperatures

   • A. V. Fedosov
   • S. V. Luniov
   • S. A. Fedosov

   Electrical and Optical Properties of Semiconductors 12 October 2010 Pages: 1263 - 1265

4. Numerical simulation of evolution of electron-hole avalanches and streamers in silicon in a uniform electric field

   • A. S. Kyuregyan

   Electrical and Optical Properties of Semiconductors 12 October 2010 Pages: 1266 - 1274

5. Heat-transfer phenomena in alloys

   • S. A. Aliev
   • R. I. Selim-zade
   • S. S. Ragimov

   Electrical and Optical Properties of Semiconductors 12 October 2010 Pages: 1275 - 1279

6. On the nature of charge carrier scattering in Ag₂Se at low temperatures

   • M. B. Jafarov

   Electrical and Optical Properties of Semiconductors 12 October 2010 Pages: 1280 - 1284

7. Repetition of the shape of the ultrafast self-modulation of the optical absorption spectrum upon varying the energy of pulse of GaAs pumping

   • N. N. Ageeva
   • I. L. Bronevoi
   • A. N. Krivonosov

   Electrical and Optical Properties of Semiconductors 12 October 2010 Pages: 1285 - 1288

8. Spontaneous emission of holes excited by an electric field in germanium

   • Ya. E. Pokrovskii
   • N. A. Khvalkovskii

   Electrical and Optical Properties of Semiconductors 12 October 2010 Pages: 1289 - 1291

9. Differential capacitance of a semiconductor film

   • D. E. Tsurikov
   • A. M. Yafyasov

   Semiconductor Structures, Interfaces, and Surfaces 12 October 2010 Pages: 1292 - 1296

10. Quantum model of electron accumulation at charged boundaries of heavily doped semiconductor films

    • V. A. Gergel
    • A. V. Verhovtseva

    Semiconductor Structures, Interfaces, and Surfaces 12 October 2010 Pages: 1297 - 1300

11. Mixing of hole states in GaAs/AlAs(110) heterostructures

    • V. N. Chernyshov

    Low-Dimensional Systems 12 October 2010 Pages: 1301 - 1307

12. Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots

    • E. S. Shatalina
    • S. A. Blokhin
    • V. M. Ustinov

    Low-Dimensional Systems 12 October 2010 Pages: 1308 - 1312

13. Quantum wells on 3C-SiC/NH-SiC heterojunctions. Calculation of spontaneous polarization and electric field strength in experiments

    • I. S. Sbruev
    • S. B. Sbruev

    Low-Dimensional Systems 12 October 2010 Pages: 1313 - 1320

14. Simulation of relaxation times and energy spectra of the CdTe/Hg_{1 − x} Cd _x Te/CdTe quantum well for variable valence band offset, well width, and composition x

    • E. O. Melezhik
    • J. V. Gumenjuk-Sichevska
    • F. F. Sizov

    Low-Dimensional Systems 12 October 2010 Pages: 1321 - 1327

15. Quantum spin Hall effect in nanostructures based on cadmium fluoride

    • N. T. Bagraev
    • O. N. Guimbitskaya
    • A. S. Shcheulin

    Low-Dimensional Systems 12 October 2010 Pages: 1328 - 1337

16. Formation of composite InGaN/GaN/InAlN quantum dots

    • A. F. Tsatsul’nikov
    • E. E. Zavarin
    • M. Hytch

    Low-Dimensional Systems 12 October 2010 Pages: 1338 - 1341

17. The effect of the dynamic adsorption mode on impedance of composite structures with porous silicon

    • A. Yu. Karlach
    • G. V. Kuznetsov
    • V. A. Skryshevsky

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 12 October 2010 Pages: 1342 - 1348

18. The structure and optical properties of nanocrytalline lead sulfide films

    • S. I. Sadovnikov
    • N. S. Kozhevnikova
    • A. A. Rempel

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 12 October 2010 Pages: 1349 - 1356

19. A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes

    • N. Yu. Gordeev
    • I. I. Novikov
    • A. R. Kovsh

    Physics of Semiconductor Devices 12 October 2010 Pages: 1357 - 1361

20. Recombination of charge carriers in the GaAs-based p-i-n diode

    • G. I. Ayzenshtat
    • A. Y. Yushenko
    • A. I. Toropov

    Physics of Semiconductor Devices 12 October 2010 Pages: 1362 - 1364

21. The temperature dependence of internal optical losses in semiconductor lasers (λ = 900–920 nm)

    • N. A. Pikhtin
    • S. O. Slipchenko
    • I. S. Tarasov

    Physics of Semiconductor Devices 12 October 2010 Pages: 1365 - 1369

22. Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900–920 nm)

    • M. A. Ladugin
    • A. V. Lyutetskiy
    • I. S. Tarasov

    Physics of Semiconductor Devices 12 October 2010 Pages: 1370 - 1374

23. Open-circuit voltage, fill factor, and efficiency of a CdS/CdTe solar cell

    • L. A. Kosyachenko
    • E. V. Grushko

    Physics of Semiconductor Devices 12 October 2010 Pages: 1375 - 1382

24. Dependence of the growth rate of an AlN layer on nitrogen pressure in a reactor for sublimation growth of AlN crystals

    • A. A. Wolfson
    • E. N. Mokhov

    Fabrication, Treatment, and Testing of Materials and Structures 12 October 2010 Pages: 1383 - 1385

25. Crystalline quality improvement in silicon films on sapphire using recrystallization from the silicon-sapphire interface

    • P. A. Alexandrov
    • K. D. Demakov
    • Yu. Yu. Kuznetsov

    Fabrication, Treatment, and Testing of Materials and Structures 12 October 2010 Pages: 1386 - 1388

26. Electrical characteristics of multigraphene films grown on high-resistivity silicon carbide substrates

    • A. A. Lebedev
    • A. M. Strel’chuk
    • A. V. Sadokhin

    Fabrication, Treatment, and Testing of Materials and Structures 12 October 2010 Pages: 1389 - 1391