Abstract
The effect of doping with tin on the ν 3 vibrational mode of oxygen in Ge has been studied. The appearance of three new series of absorption lines besides the ν 3 oxygen vibration spectra was found. The spectrum structure in each series of lines found is similar to the ν 3 oxygen spectrum structure in Ge. But unlike the ν 3 mode, the fine structure due to rotational-vibrational interaction of the ν 3 and ν 2 modes is not observed and the spectrum structure remains up to temperatures of 130 K. The found three sets of absorption lines are ascribed to the ν 3 vibration of interstitial oxygen disturbed by tin atoms located in the nearest environment. The assumption has been made that no rotation of oxygen around a Ge-Ge bond for a Ge-O-Ge quasimolecule disturbed by a neighbour Sn atom occurs.
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References
J. W. Corbett, R. S. McDonald, and G. D. Watkins, J. Phys. Chem. Sol. 25, 873 (1964).
D. R. Bosomworth, W. Hayes, A. R. L. Spray, and G. D. Watkins, Proc. R. Soc. (London) A 317, 133 (1970).
B. Pajot, in Semicond. Semimet. (Academic Press, New York, 1994), vol. 42, p. 191.
H. W. Kaiser, J. Phys. Chem. Sol. 23, 255 (1962).
H. B. Pajot and P. Clauws, in Proc. of the 18th Int. Conf. Physics of Semiconductors, Ed. by O. Engstrom (World Sci., Singapore, 1987), p. 911.
M. Gienger, M. Glaser, and K. Lassman, Solid State Commun. 86, 285 (1993).
E. Artacho, F. Ynduráin, B. Pajot, R. Ramirez, C. P. Herrero, L. I. Khirunenko, K. M. Itoh, and E. E. Haller, Phys. Rev. B 56, 3820 (1997).
K. Lassman, C. Linsenmaier, F. Maier, F. Zeller, E. E. Haller, K. M. Itoh, L. I. Khirunenko, B. Pajot, and H. Müssig, Physica B 263–264, 384 (1999).
L. I. Khirunenko, V. I. Shakhovtsov, V. K. Shinkarenko, and F. M. Vorobkalo, Sov. Phys. Semicond. 24, 663 (1990).
A. J. Mayur, M. Dean Sciacca, M. K. Udo, A. K. Ramdas, K. Itoh, J. Wolk, and E. E. Haller, Phys. Rev. B 49, 16293 (1994).
V. V. Litvinov, B. G. Svensson, L. I. Murin, J. L. Lindström, V. P. Markevich, and A. R. Peaker, J. Appl. Phys. 100, 033525 (2006).
L. I. Khirunenko, Yu. V. Pomozov, M. G. Sosnin, and V. K. Shinkarenko, Physica B 273–274, 317 (1999).
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Khirunenko, L.I., Pomozov, Y.V., Sosnin, M.G. et al. Oxygen in Ge:Sn. Semiconductors 44, 1253–1257 (2010). https://doi.org/10.1134/S1063782610100015
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DOI: https://doi.org/10.1134/S1063782610100015