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Quantum wells on 3C-SiC/NH-SiC heterojunctions. Calculation of spontaneous polarization and electric field strength in experiments

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Abstract

The results of experiments with quantum wells on 3C-SiC/4H-SiC and 3C-SiC/6H-SiC heterojunctions obtained by various methods are reconsidered. Spontaneous polarizations, field strengths, and energies of local levels in quantum wells on 3C-SiC/NH-SiC heterojunctions were calculated within a unified model. The values obtained are in agreement with the results of all considered experiments. Heterojunction types are determined. Approximations for valence band offsets on heterojunctions between silicon carbide polytypes and the expression for calculating local levels in quantum wells on the 3C-SiC/NH-SiC heterojunction are presented. The spontaneous polarizations and field strengths induced by spontaneous polarization on 3C-SiC/4H-SiC and 3C-SiC/6H-SiC heterojunctions were calculated as 0.71 and 0.47 C/m2 and 0.825 and 0.55 MV/cm, respectively.

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Authors and Affiliations

  1. Moscow Aviation Institute, Volokolamskoe sh. 4, Moscow, 125993, Russia

    I. S. Sbruev & S. B. Sbruev

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  1. I. S. Sbruev
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  2. S. B. Sbruev
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Correspondence to S. B. Sbruev.

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Original Russian Text © I.S. Sbruev, S.B. Sbruev, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 10, pp. 1357–1364.

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Sbruev, I.S., Sbruev, S.B. Quantum wells on 3C-SiC/NH-SiC heterojunctions. Calculation of spontaneous polarization and electric field strength in experiments. Semiconductors 44, 1313–1320 (2010). https://doi.org/10.1134/S1063782610100131

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  • DOI: https://doi.org/10.1134/S1063782610100131

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