1. Formation of phases in the films of a Ag-In-Se system

   • D. I. Ismayilov
   • N. K. Kerimova

   Atomic Structure and Nonelectronic Properties of Semiconductors 15 September 2009 Pages: 1111 - 1114

2. Features of the mechanisms of generation and “Healing” of structural defects in the heavily doped intermetallic semiconductor n-ZrNiSn

   • V. A. Romaka
   • E. K. Hlil
   • A. M. Goryn

   Atomic Structure and Nonelectronic Properties of Semiconductors 15 September 2009 Pages: 1115 - 1123

3. The mechanism of generation of the donor- and acceptor-type defects in the n-TiNiSn semiconductor heavily doped with Co impurity

   • V. A. Romaka
   • Yu. V. Stadnyk
   • A. M. Goryn

   Electronic and Optical Properties of Semiconductors 15 September 2009 Pages: 1124 - 1130

4. Effect of a high electric field on the conductivity of MnGa₂S₄, MnIn₂S₄, and MnGaInS₄ single crystals

   • N. N. Niftiev
   • O. B. Tagiev

   Electronic and Optical Properties of Semiconductors 15 September 2009 Pages: 1131 - 1133

5. Effect of the magnetic phase transition on the charge transport in layered semiconductor ferromagnets TlCrS₂ and TlCrSe₂

   • R. G. Veliyev
   • R. Z. Sadikhov
   • A. I. Jabbarov

   Electronic and Optical Properties of Semiconductors 15 September 2009 Pages: 1134 - 1137

6. Electrical properties of In₂Se₃ single crystals and photosensitivity of Al/In₂Se₃ Schottky barriers

   • I. V. Bodnar
   • G. A. Ilchuk
   • M. Serginov

   Electronic and Optical Properties of Semiconductors 15 September 2009 Pages: 1138 - 1141

7. The influence of the magnetic field on the effect of drag of electrons by phonons in n-Cd _x Hg_{1 − x} Te

   • S. A. Aliyev
   • E. I. Zulfigarov
   • Z. F. Agayev

   Electronic and Optical Properties of Semiconductors 15 September 2009 Pages: 1142 - 1145

8. Electronic properties and pinning of the Fermi level in irradiated II–IV–V₂ semiconductors

   • V. N. Brudnyi

   Electronic and Optical Properties of Semiconductors 15 September 2009 Pages: 1146 - 1154

9. Electron spectrum and scattering of charge carriers in PbTe:(Na + Te)

   • L. V. Prokofieva
   • D. A. Pshenay-Severin
   • A. A. Shabaldin

   Electronic and Optical Properties of Semiconductors 15 September 2009 Pages: 1155 - 1158

10. Photoluminescence of silicon after deposition of polycrystalline diamond films

    • D. F. Aminev
    • V. S. Bagaev
    • A. V. Savel’ev

    Semiconductor Structures, Interfaces, and Surfaces 15 September 2009 Pages: 1159 - 1163

11. Flow of the current along metallic shunts in ohmic contacts to wide-gap III–V semiconductors

    • T. V. Blank
    • Yu. A. Goldberg
    • E. A. Posse

    Semiconcductor Structures, Interfaces, and Surfaces 15 September 2009 Pages: 1164 - 1169

12. Eddy currents in the p–n junction in a microwave field

    • S. H. Shamirzaev
    • G. Gulyamov
    • A. G. Gulyamov

    Semiconductor Structures, Interfaces, and Surfaces 15 September 2009 Pages: 1170 - 1173

13. Behavior of the phonon replicas of the acceptor-bound exciton’s recombination line in GaAs/AlGaAs quantum wells

    • P. V. Petrov
    • Yu. L. Ivanov
    • N. S. Averkiev

    Low-Dimensional Systems 15 September 2009 Pages: 1174 - 1176

14. Transport of electrons in a GaAs quantum well in high electric fields

    • J. Požela
    • K. Požela
    • V. Juciené

    Low-Dimensional Systems 15 September 2009 Pages: 1177 - 1181

15. The simplest electron-hole complexes localized at longitudinal fluctuations in quantum wires

    • M. A. Semina
    • R. A. Sergeev
    • R. A. Suris

    Low-Dimensional Systems 15 September 2009 Pages: 1182 - 1192

16. Local structure of germanium-sulfur, germanium-selenium, and germanium-tellurium vitreous alloys

    • G. A. Bordovsky
    • E. I. Terukov
    • P. P. Seregin

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 15 September 2009 Pages: 1193 - 1197

    

17. Mechanisms of formation of N–S transition in nonisothermal I–V characteristics of a p–i–n diode

    • A. V. Gorbatyuk
    • F. B. Serkov

    Physics of Semiconductor Devices 15 September 2009 Pages: 1198 - 1204

18. Generation efficiency of single-photon current pulses in the Geiger mode of silicon avalanche photodiodes

    • A. V. Verkhovtseva
    • V. A. Gergel

    Physics of Semiconductor Devices 15 September 2009 Pages: 1205 - 1208

19. Experimental 4H-SiC junction-barrier Schottky (JBS) diodes

    • P. A. Ivanov
    • I. V. Grekhov
    • O. I. Kon’kov

    Physics of Semiconductor Devices 15 September 2009 Pages: 1209 - 1212

20. A study of GaAs: Si/GaAs: C tunnel diodes grown by MOCVD

    • D. A. Vinokurov
    • M. A. Ladugin
    • I. S. Tarasov

    Physics of Semiconductor Devices 15 September 2009 Pages: 1213 - 1216

21. Photoelectric signatures of CdZnTe crystals

    • A. V. But
    • V. P. Migal’
    • A. S. Fomin

    Fabrication, Treatment, and Testing of Materials and Structures 15 September 2009 Pages: 1217 - 1220

22. Phase formation under the effect of spinodal decomposition in epitaxial alloys of Ga _x In_{1 − x} P/GaAs(100) heterostructures

    • P. V. Seredin
    • E. P. Domashevskaya
    • I. S. Tarasov

    Fabrication, Treatment, and Testing of Materials and Structures 15 September 2009 Pages: 1221 - 1225

23. Nonlinear effects during the growth of semiconductor nanowires

    • V. G. Dubrovskii
    • N. V. Sibirev
    • M. A. Timofeeva

    Fabrication, Treatment, and Testing of Materials and Structures 15 September 2009 Pages: 1226 - 1234

24. Crystal perfection of GaP films grown on Si substrates by solid-source MBE with atomic hydrogen

    • M. A. Putuato
    • Yu. B. Bolkhovityanov
    • A. K. Gutakovskii

    Fabrication, Treatment, and Testing of Materials and Structures 15 September 2009 Pages: 1235 - 1239

25. Integrated diagnostics of heterostructures with QW layers

    • S. G. Konnikov
    • A. A. Gutkin
    • M. A. Yagovkina

    Fabrication, Treatment, and Testing of Materials and Structures 15 September 2009 Pages: 1240 - 1247

26. Optimization of structural perfection of 4H-polytype silicon carbide ingots

    • D. D. Avrov
    • S. I. Dorozhkin
    • A. Yu. Fadeev

    Fabrication, Treatment, and Testing of Materials and Structures 15 September 2009 Pages: 1248 - 1254