Abstract
The effect of instability of alloys of Ga x In1 − x P/GaAs(100) semiconductor epitaxial heterostructures in the composition region x ≈ 0.50 is studied by X-ray diffraction and electron microscopy. The possibility of emergence of modulated relaxation structures on the surface of a Ga x In1 − x P alloy is shown. This phenomenon is accompanied by the emergence of satellites of main X-ray reflections corresponding to a single-phase structure.
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Original Russian Text © P.V. Seredin, E.P. Domashevskaya, Val.E. Rudneva, V.E. Rudneva, N.N. Gordienko, A.V. Glotov, I.N. Arsentyev, D.A. Vinokurov, A.L. Stankevich, I.S. Tarasov, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 9, pp. 1261–1266.
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Seredin, P.V., Domashevskaya, E.P., Rudneva, V.E. et al. Phase formation under the effect of spinodal decomposition in epitaxial alloys of Ga x In1 − x P/GaAs(100) heterostructures. Semiconductors 43, 1221–1225 (2009). https://doi.org/10.1134/S106378260909022X
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DOI: https://doi.org/10.1134/S106378260909022X