Abstract
Phonon replicas of the photoluminescence line originating from recombination of acceptor-bound excitons in GaAs/AlGaAs quantum-well structures are studied. It is shown that recombination of an acceptor-bound exciton is accompanied by an Auger-type process where the constituent heavy hole in the remaining neutral acceptor makes a transition to an excited light-hole state. The excess angular momentum of the hole is transferred to the phonon.
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Original Russian Text © P.V. Petrov, Yu.L. Ivanov, N.S. Averkiev, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 9, pp. 1214–1216.
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Petrov, P.V., Ivanov, Y.L. & Averkiev, N.S. Behavior of the phonon replicas of the acceptor-bound exciton’s recombination line in GaAs/AlGaAs quantum wells. Semiconductors 43, 1174–1176 (2009). https://doi.org/10.1134/S1063782609090139
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DOI: https://doi.org/10.1134/S1063782609090139