1. Phase composition of films in a Bi-S system and formation of Bi₂S₃ films with different substructures

   • G. M. Akhmedov

   Atomic Structure and Nonelectronic Properties of Semiconductors 05 February 2011 Pages: 129 - 130

2. Role of background O and Cu impurities in the optics of ZnSe crystals in the context of the band anticrossing model

   • N. K. Morozova
   • D. A. Mideros
   • V. G. Galstyan

   Electronic and Optical Properties of Semiconductors 05 February 2011 Pages: 131 - 136

3. Electrical properties of Si:Er/Si layers grown by sublimation molecular-beam epitaxy

   • O. V. Belova
   • V. N. Shabanov
   • Z. F. Krasil’nik

   Electronic and Optical Properties of Semiconductors 05 February 2011 Pages: 137 - 141

4. Bistable amphoteric centers in semiconductors

   • A. G. Nikitina
   • V. V. Zuev

   Electronic and Optical Properties of Semiconductors 05 February 2011 Pages: 142 - 148

5. Photosensitivity of Pb_{1 − x} Sn _x Te:In films in the region of intrinsic absorption

   • A. É. Klimov
   • V. N. Shumskiĭ

   Electronic and Optical Properties of Semiconductors 05 February 2011 Pages: 149 - 155

6. Optical properties of AgGa _x In_{1 − x} Se₂ alloys

   • I. V. Bodnar’

   Electronic and Optical Properties of Semiconductors 05 February 2011 Pages: 156 - 158

7. Spatial distribution of defects and the kinetics of nonequilibrium charge carriers in GaN wurtzite crystals doped with Sm, Eu, Er, Tm, and supplementary Zn impurities

   • M. M. Mezdrogina
   • V. V. Krivolapchuk
   • Yu. V. Kozhanova

   Electronic and Optical Properties of Semiconductors 05 February 2011 Pages: 159 - 172

8. Ionization of the sulfur-related DX Center in In _{1 − x} Ga _x P in an electric field

   • Yu. K. Krutogolov

   Electronic and Optical Properties of Semiconductors 05 February 2011 Pages: 173 - 178

9. Stimulated radiation of optically pumped Cd _x Hg_{1 − x} Te-Based heterostructures at room temperature

   • A. A. Andronov
   • Yu. N. Nozdrin
   • R. N. Smirnov

   Semiconductor Structures, Interfaces, and Surfaces 05 February 2011 Pages: 179 - 182

10. Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures

    • G. A. Kachurin
    • S. G. Cherkova
    • M. Deutschmann

    Low-Dimensional Systems 05 February 2011 Pages: 183 - 187

11. Photoluminescence of localized excitons in InGan quantum dots

    • S. O. Usov
    • A. F. Tsatsul’nikov
    • N. N. Ledentsov

    Low-Dimensional Systems 05 February 2011 Pages: 188 - 191

12. Photoconductivity of thin a-Si:H films

    • A. G. Kazanskiĭ
    • O. G. Koshelev
    • A. A. Khomich

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 05 February 2011 Pages: 192 - 194

13. Optical studies of AlN/n-Si(100) films obtained by the method of high-frequency magnetron sputtering

    • N. S. Zayats
    • V. G. Boĭko
    • N. V. Sopinskiĭ

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 05 February 2011 Pages: 195 - 198

14. Study of the conductance of ultrathin tin diphthalocyanine films

    • N. L. Levshin
    • N. N. Pronin
    • S. G. Yudin

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 05 February 2011 Pages: 199 - 201

15. Variation in optical-absorption edge in SiN _x layers with silicon clusters

    • M. D. Efremov
    • V. A. Volodin
    • A. A. Popov

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 05 February 2011 Pages: 202 - 207

16. Some aspects of selection of impurities improving photoelectric characteristics of chalcogenide vitreous semiconductors

    • I. I. Burdiyan
    • V. V. Cosiuc
    • R. A. Pynzar’

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 05 February 2011 Pages: 208 - 210

17. High-voltage (900 V) 4 H-SiC Schottky diodes with a boron-implanted guard p-n junction

    • I. V. Grekhov
    • P. A. Ivanov
    • T. P. Samsonova

    Physics of Semiconductor Devices 05 February 2011 Pages: 211 - 214

18. Decrease in effective electron mobility in the channel of a metal-oxide-semiconductor transistor as the gate length is decreased

    • A. A. Frantsuzov
    • N. I. Boyarkina
    • V. P. Popov

    Physics of Semiconductor Devices 05 February 2011 Pages: 215 - 219

19. Effect of Auger recombination on the thermal stability of high-voltage high-power semiconductor diodes

    • T. T. Mnatsakanov
    • M. E. Levinshteĭn
    • A. S. Freĭdlin

    Physics of Semiconductor Devices 05 February 2011 Pages: 220 - 227

20. Optical parameters of diode lasers based on an InAsSb/InAsSbP heterostructure

    • A. P. Astakhova
    • T. V. Bez”yazychnaya
    • Yu. P. Yakovlev

    Physics of Semiconductor Devices 05 February 2011 Pages: 228 - 231

21. Effect of hydrogen on anisotropy of the p-GaN growth rate in the case of side-wall MOCVD

    • W. V. Lundin
    • A. E. Nikolaev
    • A. F. Tsatsul’nikov

    Fabrication, Treatment, and Testing of Materials and Structures 05 February 2011 Pages: 232 - 237

22. Diffusion of chromium into epitaxial gallium arsenide

    • M. D. Vilisova
    • E. P. Drugova
    • V. A. Chubirko

    Fabrication, Treatment, and Testing of Materials and Structures 05 February 2011 Pages: 238 - 241

23. Effect of electron irradiation on carrier removal rate in silicon and silicon carbide with 4H modification

    • V. V. Kozlovskiĭ
    • V. V. Emtsev
    • A. A. Lebedev

    Fabrication, Treatment, and Testing of Materials and Structures 05 February 2011 Pages: 242 - 247