Abstract
Morphological and optical (with reflection spectra in the range of 200–750 nm, transmission spectra in the range of 2–25 μm, and ellipsometry) studies were performed for AlN films that had a thickness of 2–3 μm and were obtained by the method of high-frequency magnetron sputtering of an aluminum target in a gas mixture of Ar and N2 (1: 3) with deposition onto single-crystal n-Si (100) substrates with a resistivity of 20–60 Ω cm. It is shown that the films are dense and transparent; they are amorphous with crystalline grains and can be used efficiently in thin-film technology for fabrication of modern microelectronic and optoelectronic devices.
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Original Russian Text © N.S. Zayats, V.G. Boĭko, P.A. Gentsar, O.S. Litvin, V.P. Papusha, N.V. Sopinskiĭ, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 2, pp. 195–198.
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Zayats, N.S., Boĭko, V.G., Gentsar, P.A. et al. Optical studies of AlN/n-Si(100) films obtained by the method of high-frequency magnetron sputtering. Semiconductors 42, 195–198 (2008). https://doi.org/10.1134/S1063782608020139
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DOI: https://doi.org/10.1134/S1063782608020139