Certain features of Ga diffusion in ZnS powders Yu. Yu. BacherikovI. P. VoronaA. A. Stadnik Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 987 - 991
Impact-ionization autosolitons in compensated silicon A. M. Musaev Electronic and Optical Properties of Semiconductors Pages: 992 - 995
Effect of vacuum annealing on the edge luminescence of undoped zinc selenide V. P. MakhniiA. M. SletovI. V. Tkachenko Electronic and Optical Properties of Semiconductors Pages: 996 - 997
Low-frequency noise in gallium nitride epitaxial layers with different degrees of order of mosaic structure N. M. ShmidtM. E. LevinshteinM. S. Shur Electronic and Optical Properties of Semiconductors Pages: 998 - 1000
Elementary blue-emission bands in the luminescence spectrum of undoped gallium nitride films A. N. GruzintsevA. N. Red’kinP. Benalloul Electronic and Optical Properties of Semiconductors Pages: 1001 - 1004
Determination of the minority-carrier lifetime in silicon ingots by photoconductivity relaxation measured at microwave frequencies P. A. BorodovskiiA. F. BuldyginA. S. Tokarev Electronic and Optical Properties of Semiconductors Pages: 1005 - 1011
Interfaces and roughness in a multilayer silicon structure A. I. BelyaevaA. A. GaluzaS. N. Kolomiets Semiconductor Structures, Interfaces, and Surfaces Pages: 1012 - 1017
Photosensitive structures based on single-crystal silicon and phthalocyanine CuPc: Fabrication and properties G. A. Il’chukN. V. KlimovaT. A. Yurre Semiconductor Structures, Interfaces, and Surfaces Pages: 1018 - 1022
Interaction of C60 molecules with the (100)W surface: Adsorption, initial stages of film growth, and thermal transformation of the adsorption layer N. R. Gall’E. V. Rut’kovA. Ya. Tontegode Semiconductor Structures, Interfaces, and Surfaces Pages: 1023 - 1029
Radiative recombination in a silicon MOS tunnel structure N. AsliM. I. VexlerA. F. Shulekin Semiconductor Structures, Interfaces, and Surfaces Pages: 1030 - 1035
Potential barrier formation at a metal-semiconductor contact using selective removal of atoms B. A. GurovichB. A. AronzonV. I. Filippov Semiconductor Structures, Interfaces, and Surfaces Pages: 1036 - 1040
Special features of radiation-defect annealing in silicon p-n structures: The role of Fe impurity atoms B. A. Komarov Semiconductor Structures, Interfaces, and Surfaces Pages: 1041 - 1046
Electrical properties of metal-semiconductor nanocontacts N. V. VostokovV. I. Shashkin Low-Dimensional Systems Pages: 1047 - 1052
Effect of electron-electron and electron-hole collisions on intraband population inversion of electrons in stepped quantum wells V. L. ZerovaG. G. ZegryaL. E. Vorob’ev Low-Dimensional Systems Pages: 1053 - 1060
Calculation of current-voltage characteristics of gallium arsenide symmetric double-barrier resonance tunneling structures with allowance for the destruction of electron-wave coherence in quantum wells D. V. PozdnyakovV. M. BorzdovF. F. Komarov Low-Dimensional Systems Pages: 1061 - 1064
Relaxation of charge carriers in quantum dots with the involvement of plasmon-phonon modes A. V. FedorovA. V. Baranov Low-Dimensional Systems Pages: 1065 - 1073
Influence of supramolecular ordering on photophysical properties of polyamidines E. L. AleksandrovaM. E. KompanE. I. Terukov Amorphous, Vitreous, and Porous Semiconductors Pages: 1074 - 1077
Current instability with an S-shaped I-V characteristic in films of a metal-polymer complex of polyamide acid with Tb+2 É. A. LebedevM. Ya. GoikhmanV. V. Kudryavtsev Amorphous, Vitreous, and Porous Semiconductors Pages: 1078 - 1080
Carrier drift mobility in porous silicon carbide L. P. KazakovaM. G. MynbaevaK. D. Mynbaev Amorphous, Vitreous, and Porous Semiconductors Pages: 1081 - 1083
Quartz microtubes based on macroporous silicon E. V. AstrovaT. N. BorovinskayaM. V. Zamoryanskaya Amorphous, Vitreous, and Porous Semiconductors Pages: 1084 - 1087
Technique for patterning macroporous silicon and the fabrication of bars of 2D photonic crystals with vertical walls E. V. AstrovaT. N. BorovinskayaT. S. Perova Amorphous, Vitreous, and Porous Semiconductors Pages: 1088 - 1091
A study of deep levels in CdHgTe by analyzing the tunneling current of photodiodes V. I. Turinov Physics of Semiconductor Devices Pages: 1092 - 1098
Lasing in Cd(Zn)Se/ZnMgSSe heterostructures pumped by nitrogen and InGaN/GaN lasers I. V. SedovaS. V. SorokinM. Heuken Physics of Semiconductor Devices Pages: 1099 - 1104
Characteristics of planar diodes based on heavily doped GaAs/AlAs superlattices in the terahertz frequency region D. G. Pavel’evN. V. DemarinaV. M. Ustinov Physics of Semiconductor Devices Pages: 1105 - 1110
Behavior of graded-gap detectors of ionizing radiation under irradiation with alpha particles L. DapkusK. PozelaV. Jasutis Physics of Semiconductor Devices Pages: 1111 - 1114