Abstract
Spectra of photoluminescence and electron spin resonance were investigated for ZnS powders annealed in the presence of metallic Ga with limited access of atmospheric air. Analysis of these spectra showed that there was no Ga impurity in the annealed ZnS powders. It was established that subsequent free access of air to annealed ZnS:Ga promotes active Ga introduction into the ZnS lattice. A mechanism of Ga diffusion in ZnS is suggested.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 9, 2004, pp. 1025–1029.
Original Russian Text Copyright © 2004 by Bacherikov, Vorona, Optasyuk, Rodionov, Stadnik.
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Bacherikov, Y.Y., Vorona, I.P., Optasyuk, S.V. et al. Certain features of Ga diffusion in ZnS powders. Semiconductors 38, 987–991 (2004). https://doi.org/10.1134/1.1797471
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DOI: https://doi.org/10.1134/1.1797471