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Special features of radiation-defect annealing in silicon p-n structures: The role of Fe impurity atoms

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

Deep-level transient spectroscopy is used to study the formation of complexes that consist of a radiation defect and a residual impurity atom in silicon. It is established that heat treatment of the diffused Si p +-n junctions irradiated with fast electrons lead to the activation of a residual Fe impurity and the formation of the FeVO (E 0.36 trap) and FeV 2 (H 0.18 trap) complexes. The formation of these traps is accompanied by the early (100–175°C) stage of annealing of the main vacancy-related radiation defects: the A centers (VO) and divacancies (V 2). The observed complexes are electrically active and introduce new electron (E 0.36: E e t =E c -0.365 eV, σ n =6.8×10−15 cm2) and hole (H 0.18: E h t =E v +0.184 eV, σ p =3.0×10−15 cm2) levels into the silicon band gap and have a high thermal stability. It is believed that the complex FeVO corresponds to the previously observed and unidentified defects that have an ionization energy of E e t =E c −(0.34–0.37) eV and appear as a result of heat treatment of irradiated diffused Si p +-n junctions.

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Authors and Affiliations

  1. Institute of Solid-State and Semiconductor Physics, Belarussian Academy of Sciences, ul. Brovki 17, Minsk, 220072, Belarus

    B. A. Komarov

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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 9, 2004, pp. 1079–1083.

Original Russian Text Copyright © 2004 by Komarov.

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Komarov, B.A. Special features of radiation-defect annealing in silicon p-n structures: The role of Fe impurity atoms. Semiconductors 38, 1041–1046 (2004). https://doi.org/10.1134/1.1797482

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