A theory of the effect of impurities on the yield stress of silicon crystals B. V. Petukhov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 369 - 375
Electric transport in gallium antimonide single crystals involving molten GaSb-Sn inclusions A. M. OrlovA. A. SkvortsovA. A. Salanov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 376 - 379
Microwave photoconductivity and photodielectric effect in thin PbS films obtained from thiocarbamide coordination compounds N. L. SermakashevaG. F. NovikovV. N. Semenov Electronic and Optical Properties of Semiconductors Pages: 380 - 386
Capacitance study of electron traps in low-temperature-grown GaAs P. N. BrunkovA. A. GutkinB. R. Semyagin Electronic and Optical Properties of Semiconductors Pages: 387 - 392
Oscillations of induced photopleochroism in ZnO/GaAs heterojunctions S. E. NikitinYu. A. NikolaevJ. Goldstein Semiconductor Structures, Interfaces, and Surfaces Pages: 393 - 396
Electron-phonon damping factor for the landau quantization of 2D electrons with a fine structure of the energy spectrum V. I. Kadushkin Semiconductor Structures, Interfaces, and Surfaces Pages: 397 - 401
Oxide-p-InSe heterostructures with improved photoelectric characteristics V. N. KaterinchukZ. D. Kovalyuk Semiconductor Structures, Interfaces, and Surfaces Pages: 402 - 405
Photosensitivity of the structures based on quinary solid solutions of the isoelectronic series of germanium A. A. VaipolinYu. A. NikolaevE. I. Terukov Semiconductor Structures, Interfaces, and Surfaces Pages: 406 - 409
Energy states in short-period symmetrical and asymmetrical (GaAs)N/(AlAs)M superlattices: The effect of the boundary conditions K. E. GlukhovA. I. BerchaV. G. Litovchenko Low-Dimensional Systems Pages: 410 - 418
Resonant Γ-X tunneling in single-barrier GaAs/AlAs/GaAs heterostructures Yu. N. KhaninE. E. VdovinYu. V. Dubrovskii Low-Dimensional Systems Pages: 419 - 430
Tuning the energy spectrum of InAs/GaAs quantum dots by varying the thickness and composition of the thin double GaAs/InGaAs cladding layer I. A. KarpovichB. N. ZvonkovS. Yu. Ermakov Low-Dimensional Systems Pages: 431 - 436
Studies of physical phenomena in semiconductor nanostructures using samples with laterally nonuniform layers: Photoluminescence of tunneling-coupled quantum wells Yu. V. KhabarovV. V. KapaevV. A. Petrov Low-Dimensional Systems Pages: 437 - 446
A model of photoinduced annealing of intrinsic defects in hexagonal CdSxSe1−x quantum dots V. P. KunetsN. R. KulishV. P. Bryksa Low-Dimensional Systems Pages: 447 - 450
Carrier density profile in weakly coupled GaAs/AlGaAs superlattices P. N. BrunkovS. O. UsovG. K. Rasulova Low-Dimensional Systems Pages: 451 - 454
Electrical properties of fine-grained polycrystalline CdTe S. A. KolosovYu. V. KlevkovA. F. Plotnikov Amorphous, Vitreous, and Porous Semiconductors Pages: 455 - 460
Exciton photoluminescence in doped quasi-1D structures based on silicon A. V. SachenkoD. V. KorbutyakO. M. Sreseli Amorphous, Vitreous, and Porous Semiconductors Pages: 461 - 467
A small-molecule organic semiconductor F. YakuphanogluM. AydinM. Sekerci Amorphous, Vitreous, and Porous Semiconductors Pages: 468 - 471
Characteristics of nuclear radiation detectors based on semi-insulating gallium arsenide E. M. VerbitskayaV. K. EreminA. Ya. Polyakov Physics of Semiconductor Devices Pages: 472 - 479
Investigation of characteristics of InSb-based photodiode linear arrays P. V. BiryulinV. I. TurinovE. B. Yakimov Physics of Semiconductor Devices Pages: 480 - 485
Thermal calculation of SiC p-i-n diodes P. B. GamuletskayaA. V. KirillovV. A. Smirnov Physics of Semiconductor Devices Pages: 486 - 493
