Abstract
The dependence of carrier density in silicon quantum wires sheathed with SiO2 on the wire diameter and the position of impurity atoms in respect to the wire center is analyzed theoretically. It is shown that, as the diameter of wires and nanocrystals decreases, the ionization energy of a dopant increases; therefore, the free carrier density decreases, and the screening of the Coulomb attraction becomes ineffective. As a result, the photoluminescence is defined by the radiative recombination of excitons even in the case of heavily doped Si. These conclusions are supported by the data of experimental study of spectral, excitation-power, and temperature dependences of photoluminescence in porous silicon structures fabricated on lightly and heavily doped Si substrates.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A. V. Sachenko and Ju. V. Kryuchenko, Semicond. Phys. Quantum Electron. Optoelectron. 3, 150 (2000).
A. Shik, J. Appl. Phys. 74, 2951 (1993).
S. I. Gubarev, I. V. Kukushkin, S. V. Tovstonog, et al., Pis'ma Zh. Éksp. Teor. Fiz. 72, 469 (2000) [JETP Lett. 72, 324 (2000)].
D. V. Kulakovskii, S. I. Gubarev, and Yu. E. Lozovik, Pis'ma Zh. Éksp. Teor. Fiz. 74, 123 (2001) [JETP Lett. 74, 118 (2001)].
M. G. Lisachenko, E. A. Konstantinova, V. Yu. Timoshenko, and P. K. Kashkarov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 344 (2002) [Semiconductors 36, 325 (2002)].
Yu. V. Kryuchenko and A. V. Sachenko, Physica E (Amsterdam) 14, 299 (2002).
J. D. Jackson, Classical Electrodynamics (Wiley, New York, 1962; Inostrannaya Literatura, Moscow, 1965).
E. A. Mulyarov and S. G. Tikhodeev, Zh. Éksp. Teor. Fiz. 111, 274 (1997) [JETP 84, 151 (1997)].
R. Loudon, Am. J. Phys. 27, 649 (1959).
G. Polisski, G. Dollinger, A. Bergmeier, et al., Phys. Status Solidi A 168, R1 (1998).
G. Polisski, H. Heckler, D. Kovalev, et al., Appl. Phys. Lett. 73, 1107 (1998).
C. Delerue, G. Allan, and M. Lannoo, J. Lumin. 80, 65 (1998).
D. N. Goryachev, G. Polisskii, and O. M. Sreseli, Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 1016 (1998) [Semiconductors 32, 910 (1998)]; L. V. Belyakov, T. L. Makarova, V. I. Sakharov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 1122 (1998) [Semiconductors 32, 1003 (1998)].
Author information
Authors and Affiliations
Additional information
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 4, 2004, pp. 479–485.
Original Russian Text Copyright © 2004 by Sachenko, Korbutyak, Kryuchenko, Sreseli.
Rights and permissions
About this article
Cite this article
Sachenko, A.V., Korbutyak, D.V., Kryuchenko, Y.V. et al. Exciton photoluminescence in doped quasi-1D structures based on silicon. Semiconductors 38, 461–467 (2004). https://doi.org/10.1134/1.1734675
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/1.1734675