Abstract
The effect of doping level on the current-voltage characteristics of semiconductor heterostructures with GaAs/AlGaAs superlattices was studied by the electrochemical capacitance-voltage profiling method. It was shown that a high density of free electrons in the GaAs/AlGaAs superlattice screens the external electric field and inhibits the formation of a domain with a high electric field that is responsible for resonant tunneling in weakly coupled superlatticest.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 4, 2004, pp. 469–472.
Original Russian Text Copyright © 2004 by Brunkov, Usov, Musikhin, Zhukov, Cirlin, Ustinov, Konnikov, Rasulova.
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Brunkov, P.N., Usov, S.O., Musikhin, Y.G. et al. Carrier density profile in weakly coupled GaAs/AlGaAs superlattices. Semiconductors 38, 451–454 (2004). https://doi.org/10.1134/1.1734673
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DOI: https://doi.org/10.1134/1.1734673