1. Semiconductor photoelectric converters for the ultraviolet region of the spectrum

   • T. V. Blank
   • Yu. A. Gol’dberg

   Review Pages: 999 - 1030

2. Diffusion of ytterbium in silicon

   • D. É. Nazyrov

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1031 - 1032

3. Migration energy of vacancies in p-type silicon crystals

   • T. A. Pagava
   • Z. V. Basheleishvili

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1033 - 1036

4. Thermal stability and transformation of C₆₀ molecules deposited on silicon-coated (111) iridium

   • N. R. Gall’
   • E. V. Rut’kov
   • A. Ya. Tontegode

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1037 - 1041

5. Microphotoluminescence spectra of cadmium telluride grown under nonequilibrium conditions

   • V. V. Ushakov
   • Yu. V. Klevkov

   Electronic and Optical Properties of Semiconductors Pages: 1042 - 1046

6. Effect of growth conditions on incorporation of Si into Ga and As sublattices of GaAs during molecular-beam epitaxy

   • I. A. Bobrovnikova
   • M. D. Vilisova
   • S. E. Toropov

   Electronic and Optical Properties of Semiconductors Pages: 1047 - 1052

7. Intervalley redistribution of electrons at low temperatures and the magnetodiode effect

   • A. A. Abramov
   • I. N. Gorbatyi

   Electronic and Optical Properties of Semiconductors Pages: 1053 - 1056

8. Electrical and thermoelectric properties of p-Ag₂Te in the β phase

   • F. F. Aliev

   Electronic and Optical Properties of Semiconductors Pages: 1057 - 1060

9. Local symmetry and electronic structure of tin atoms in (Pb_1−x Sn_x)_1−z In_zTe lattices

   • S. A. Nemov
   • Yu. V. Kozhanova
   • D. V. Shamshur

   Electronic and Optical Properties of Semiconductors Pages: 1061 - 1062

10. Phenomena of the collective behavior of autosolitons in a dissipative structure in InSb

    • I. K. Kamilov
    • A. A. Stepurenko
    • A. S. Kovalev

    Electronic and Optical Properties of Semiconductors Pages: 1063 - 1069

11. On the Nernst coefficient of binary composites in a weak magnetic field

    • B. Ya. Balagurov

    Electronic and Optical Properties of Semiconductors Pages: 1070 - 1075

12. Effect of electron irradiation on optical and photoelectric properties of microcrystalline hydrogenated silicon

    • A. G. Kazanskii
    • P. A. Forsh
    • M. V. Chukichev

    Electronic and Optical Properties of Semiconductors Pages: 1076 - 1079

13. Optical and structural properties of ingaasp miscibility-gap solid solutions grown by MOVPE on GaAs(001) substrates

    • L. S. Vavilova
    • D. A. Vinokurov
    • V. V. Shamakhov

    Electronic and Optical Properties of Semiconductors Pages: 1080 - 1084

14. Carrier multiplication in silicon P-N junctions

    • Yu. N. Serezhkin
    • A. A. Shesterkina

    Semiconductors Structures, Interfaces, and Surfaces Pages: 1085 - 1089

15. Dependence of the binding energy of A(+) centers on quantum-well width in GaAs/AlGaAs structures

    • Yu. L. Ivanov
    • P. V. Petrov
    • V. M. Ustinov

    Low-Dimensional Systems Pages: 1090 - 1092

16. Scattering of electrons at impurity ions at low temperatures in a superlattice with doped quantum wells

    • S. I. Borisenko

    Low-Dimensional Systems Pages: 1093 - 1099

17. Effective cross section for photoluminescence excitation and lifetime of excited Er³⁺ ions in selectively doped multilayer Si:Er structures

    • S. V. Gastev
    • A. M. Emel’yanov
    • V. B. Shmagin

    Low-Dimensional Systems Pages: 1100 - 1103

18. Metamorphic modulation-doped InAlAs/InGaAs/InAlAs heterostructures with high electron mobility grown on gaas substrates

    • E. S. Semenova
    • A. E. Zhukov
    • N. N. Ledentsov

    Low-Dimensional Systems Pages: 1104 - 1106

19. Electrical properties and luminescence spectra of light-emitting diodes based on InGaN/GaN heterostructures with modulation-doped quantum wells

    • S. S. Mamakin
    • A. É. Yunovich
    • F. I. Manyakhin

    Physics of Semiconductor Devices Pages: 1107 - 1113

20. Phase and structural changes stimulated in multilayer contacts to n-GaAs by rapid thermal annealing

    • N. S. Boltovets
    • V. N. Ivanov
    • I. V. Prokopenko

    Physics of Semiconductor Devices Pages: 1114 - 1118

21. Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE

    • A. E. Zhukov
    • A. R. Kovsh
    • Zh. I. Alferov

    Physics of Semiconductor Devices Pages: 1119 - 1122

22. On the fast recovery of the blocking property of silicon carbide diodes

    • I. V. Grekhov
    • A. S. Kyuregyan
    • S. N. Yurkov

    Physics of Semiconductor Devices Pages: 1123 - 1126