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Intervalley redistribution of electrons at low temperatures and the magnetodiode effect

  • Electronic and Optical Properties of Semiconductors
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Abstract

The I-V characteristics of silicon p-i-n structures were measured in a magnetic field transverse to the current at a temperature of 77 K. The special features of the I-V characteristics and the magnetosensitivity at low temperatures are attributed to the superposition of the anisotropic dimensional effects caused by the Lorentz force and by the intervalley redistribution of electrons. This redistribution can, in turn, be caused by field heating of electrons (the Sasaki effect) in the semiconductor bulk or by violation of the mutual compensation for transverse electron fluxes belonging to various valleys near the semiconductor surface.

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Authors and Affiliations

  1. Moscow State Institute of Electronic Engineering (Technical University), Moscow, 103498, Russia

    A. A. Abramov & I. N. Gorbatyi

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  1. A. A. Abramov
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  2. I. N. Gorbatyi
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 9, 2003, pp. 1078–1081.

Original Russian Text Copyright © 2003 by Abramov, Gorbaty\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \).

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Abramov, A.A., Gorbatyi, I.N. Intervalley redistribution of electrons at low temperatures and the magnetodiode effect. Semiconductors 37, 1053–1056 (2003). https://doi.org/10.1134/1.1610117

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  • DOI: https://doi.org/10.1134/1.1610117

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