Abstract
Optical and structural properties of InGaAsP solid solutions grown by MOVPE at 600°C on GaAs(001) substrates are studied. The photoluminescence spectra of InGaAsP solid solutions with a composition corresponding to the miscibility gap contain a main band and an additional auxiliary band. It is established that both bands are related to band-to-band radiative transitions; i. e., the studied layer includes two solid solutions with different compositions and different band gaps. It is shown that the observed high-energy shift of the additional band with an increasing level of excitation is governed by the nanometer size of domains in the corresponding solid solution. This conclusion is consistent with the results of TEM study, which revealed the presence of a periodic structure comprised of alternating domains with different compositions. This structure of alternating domains extends along the [100] and [010] directions with a characteristic period of 10 nm.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 9, 2003, pp. 1104–1108.
Original Russian Text Copyright © 2003 by Vavilova, Vinokurov, Kapitonov, Murashova, Nevedomski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Poletaev, Sitnikova, Tarasov, Shamakhov.
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Vavilova, L.S., Vinokurov, D.A., Kapitonov, V.A. et al. Optical and structural properties of ingaasp miscibility-gap solid solutions grown by MOVPE on GaAs(001) substrates. Semiconductors 37, 1080–1084 (2003). https://doi.org/10.1134/1.1610123
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DOI: https://doi.org/10.1134/1.1610123