Formation of selenium-containing complexes in silicon A. A. TaskinE. G. Tishkovskii Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 605 - 614
Growth of diamond films on crystalline silicon by hot-filament chemical vapor deposition M. V. BaidakovaA. Ya. Vul’A. Krüger Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 615 - 620
Local vibrational modes of the oxygen-vacancy complex in germanium V. V. LitvinovL. I. MurinA. N. Petukh Electronic and Optical Properties of Semiconductors Pages: 621 - 624
Luminescent Si-Ge solid solution layers ER-doped in molecular-beam epitaxy V. G. ShengurovS. P. SvetlovA. N. Yablonsky Electronic and Optical Properties of Semiconductors Pages: 625 - 628
Migration of laser-induced point defects in IV–VI compounds S. V. Plyatsko Electronic and Optical Properties of Semiconductors Pages: 629 - 635
Physical properties of semi-insulating CdTe:Cl single crystals grown from the vapor phase V. D. PopovichG. M. GrigorovichP. N. Tkachuk Electronic and Optical Properties of Semiconductors Pages: 636 - 640
Low-temperature time-resolved photoluminescence in InGaN/GaN quantum wells A. V. AndrianovV. Yu. NekrasovM. N. Tkachuk Electronic and Optical Properties of Semiconductors Pages: 641 - 646
Silicon nanocrystal formation upon annealing of SiO2 layers implanted with Si ions G. A. KachurinS. G. YanovskayaM. -O. Ruault Semiconductor Structures, Interfaces, and Surfaces Pages: 647 - 651
Role of silicon vacancies in formation of Schottky barriers at Ag and Au contacts to 3C-and 6H-SiC S. Yu. DavydovA. A. LebedevYu. M. Tairov Semiconductor Structures, Interfaces, and Surfaces Pages: 652 - 654
Measurements of deep trap concentration in diodes with a high Schottky barrier by deep-level transient spectroscopy E. N. AgafonovA. N. GeorgobianiL. S. Lepnev Semiconductor Structures, Interfaces, and Surfaces Pages: 655 - 658
Simulation of the energy spectrum of surface states in an MIS structure taking current leakage through the insulator into account L. S. Berman Semiconductor Structures, Interfaces, and Surfaces Pages: 659 - 662
Mixed vibrational modes of PbTe nanocrystallites A. I. BelogorokhovL. I. BelogorokhovaS. V. Lemeshko Low-Dimensional Systems Pages: 663 - 669
Electron states in (AlAs)M(AlxGa1−x As)N superlattices G. F. KaravaevV. N. ChernyshovR. M. Egunov Low-Dimensional Systems Pages: 670 - 673
Electron mobility in a AlGaAs/GaAs/AlGaAs quantum well V. G. MokerovG. B. GalievV. Juciene Low-Dimensional Systems Pages: 674 - 678
Resonance transfer of charge carriers in Si/CaF2 periodic nanostructures via trap states in insulator layers Yu. A. BerashevichA. L. DanilyukV. E. Borisenko Low-Dimensional Systems Pages: 679 - 684
Inversion of the electron population in subbands of dimensional quantization with longitudinal transport in tunnel-coupled quantum wells V. Ya. AleshkinA. A. Dubinov Low-Dimensional Systems Pages: 685 - 690
Photoconductivity of nanostructured hydrogenated silicon films O. A. Golikova Amorphous, Vitreous, and Porous Semiconductors Pages: 691 - 694
Vibratonal spectroscopy of a-C:H(Co) T. K. ZvonarevaE. I. IvanovaV. I. Ivanov-Omskii Amorphous, Vitreous, and Porous Semiconductors Pages: 695 - 700
Spontaneous and stimulated emission from magnetron-deposited ZnO-SiO2-Si thin-film nanocavities A. N. GruzintsevV. T. VolkovP. Benalloul Physics of Semiconductor Devices Pages: 701 - 705
Photoelectric properties of p +-n junctions based on 4H-SiC ion-implanted with aluminum G. N. ViolinaE. V. KalininaA. O. Konstantinov Physics of Semiconductor Devices Pages: 706 - 709
Silicon carbide detectors of high-energy particles G. N. ViolinaE. V. KalininaA. O. Konstantinov Physics of Semiconductor Devices Pages: 710 - 713
Waveguide InGaAsP/InP photodetectors for low-power autocorrelation measurements at 1.55 µm N. Yu. GordeevL. Ya. KarachinskyP. S. Kop’ev Physics of Semiconductor Devices Pages: 714 - 716