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Physical properties of semi-insulating CdTe:Cl single crystals grown from the vapor phase

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Abstract

A vapor phase method for the growth of high-resistivity CdTe:Cl single crystals is described. The photoluminescence spectra of these crystals are studied as a function of the dopant content. The energy level position which determines the conductivity of these single crystals was determined from electric and photoelectric investigations.

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Authors and Affiliations

  1. Ivan Franko State Pedagogical University, Drogobych, 82100, Ukraine

    V. D. Popovich, G. M. Grigorovich & P. M. Peleshchak

  2. Fed’kovich National University, 58012, Chernovtsy, Ukraine

    P. N. Tkachuk

Authors
  1. V. D. Popovich
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  2. G. M. Grigorovich
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  3. P. M. Peleshchak
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  4. P. N. Tkachuk
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 6, 2002, pp. 674–678.

Original Russian Text Copyright © 2002 by Popovich, Grigorovich, Peleshchak, Tkachuk.

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Popovich, V.D., Grigorovich, G.M., Peleshchak, P.M. et al. Physical properties of semi-insulating CdTe:Cl single crystals grown from the vapor phase. Semiconductors 36, 636–640 (2002). https://doi.org/10.1134/1.1485661

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  • DOI: https://doi.org/10.1134/1.1485661

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