Abstract
The formation of silicon nanocrystals in SiO2 layers implanted with Si ions was investigated by Raman scattering, X-ray photoelectron spectroscopy, and photoluminescence. The excess Si concentration was varied between 3 and 14 at. %. It was found that Si clusters are formed immediately after implantation. As the temperature of the subsequent annealing was raised, the segregation of Si accompanied by the formation of Si-Si4 bonds was enhanced but the scattering by clusters was reduced. This effect is attributed to the transformation of loosely packed clusters into compact, separate-phase nanoscale Si precipitates, with the Raman peak observed at 490 cm−1 being related to surface scattering. The process of Si segregation was completed at 1000°C. Nevertheless, characteristic nanocrystal photoluminescence was observed only after annealing at 1100°C. Simultaneously, scattering in the range 495–520 cm−1, typical of nanocrystals, appeared; however, the “surface-related” peak at 490 cm−1 persisted. It is argued that nanocrystals are composed of an inside region and a surface layer, which is responsible for their increased formation temperature.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 6, 2002, pp. 685–689.
Original Russian Text Copyright © 2002 by Kachurin, Yanovskaya, Volodin, Kesler, Leier, Ruault.
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Kachurin, G.A., Yanovskaya, S.G., Volodin, V.A. et al. Silicon nanocrystal formation upon annealing of SiO2 layers implanted with Si ions. Semiconductors 36, 647–651 (2002). https://doi.org/10.1134/1.1485663
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DOI: https://doi.org/10.1134/1.1485663