1. Thermodynamic stability of bulk and epitaxial Ge_1−x Sn_x semiconductor alloys

   • V. G. Deibuk
   • Yu. G. Korolyuk

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1073 - 1076

2. The effect of the concentration of the majority charge carriers and irradiation intensity on the efficiency of radiation-defect production in n-Si crystals

   • T. A. Pagava
   • Z. V. Basheleishvili

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1077 - 1078

3. Dependence of the annealing kinetics of A centers and divacancies on temperature, particle energy, and irradiation dose for n-Si crystals

   • T. A. Pagava

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1079 - 1082

4. Chalcogen dimers in silicon

   • A. A. Taskin

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1083 - 1090

5. Chemical bonding and elastic constants of certain ternary III–V solid solutions

   • V. G. Deibuk
   • Ya. I. Viklyuk

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1091 - 1096

6. The nucleation of coherent semiconductor islands during the Stranski-Krastanov growth induced by elastic strains

   • S. A. Kukushkin
   • A. V. Osipov
   • P. Hess

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1097 - 1105

7. Investigation of vacancy-type complexes in GaN and AlN using positron annihilation

   • N. Yu. Arutyunov
   • A. V. Mikhailin
   • E. E. Haller

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1106 - 1110

8. The influence of shallow impurities on the temperature dependence of microhardness and the photomechanical effect in semiconductors

   • A. B. Gerasimov
   • G. D. Chiradze

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1111 - 1113

9. Neutron-irradiation-induced effects caused by divacancy clusters with a tetravacancy core in float-zone silicon

   • P. F. Ermolov
   • D. E. Karmanov
   • E. K. Shabalina

   Electronic and Optical Properties of Semiconductors Pages: 1114 - 1122

10. Electronic properties of liquid Tl₂Te, Tl₂Se, Ag₂Te, Cu₂Te, and Cu₂Se alloys

    • V. M. Sklyarchuk
    • Yu. O. Plevachuk

    Electronic and Optical Properties of Semiconductors Pages: 1123 - 1127

11. Dependence of GaN photoluminescence on the excitation intensity

    • V. N. Bessolov
    • V. V. Evstropov
    • M. V. Mesh

    Electronic and Optical Properties of Semiconductors Pages: 1128 - 1131

12. Photosensitivity of structures based on I-III_n-VI_m ternary compounds containing ordered vacancies

    • I. V. Bodnar’
    • V. Yu. Rud’
    • M. V. Yakushev

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1132 - 1135

13. Effect of the state of the silicon surface on hydrogen sensitivity of Pd/n-Si barrier structures

    • V. M. Kalygina
    • L. S. Khludkova
    • T. A. Davydova

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1136 - 1137

14. Electrical properties of narrow-gap HgMnTe Schottky diodes

    • L. A. Kosyachenko
    • A. V. Markov
    • Ye. F. Sklyarchuk

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1138 - 1145

15. Anisotropy of magnetooptical absorption of quantum dot-impurity center complexes

    • V. D. Krevchik
    • A. B. Grunin
    • R. V. Zaitsev

    Low-Dimensional Systems Pages: 1146 - 1153

16. Dependence of the optical gap of Si quantum dots on the dot size

    • V. A. Burdov

    Low-Dimensional Systems Pages: 1154 - 1158

17. Dependence of scattering of quasi-two-dimensional electrons by acoustic phonons on the parameters of a GaAs/Al_xGa_1−x As superlattice

    • S. I. Borisenko

    Low-Dimensional Systems Pages: 1159 - 1162

18. Temperature dependence of conductance of electrostatically disordered quasi-2D semiconductor systems near an insulator-metal percolation transition

    • A. B. Davydov
    • B. A. Aronzon
    • A. S. Vedeneev

    Low-Dimensional Systems Pages: 1163 - 1168

19. Photoluminescence and recombination luminescence in amorphous molecular semiconductors doped with organic dyes

    • N. A. Davidenko
    • S. L. Studzinskii
    • A. J. Al-Kahdymi

    Amorphous, Vitreous, and Porous Semiconductors Pages: 1169 - 1179

20. Crystallization of amorphous hydrogenated silicon films deposited under various conditions

    • O. A. Golikova
    • E. V. Bogdanova
    • U. S. Babakhodzhaev

    Amorphous, Vitreous, and Porous Semiconductors Pages: 1180 - 1183

21. Electroluminescence from porous silicon in the cathodic reduction of persulfate ions: Degree of reversibility of the tuning effect

    • A. A. Saren
    • S. N. Kuznetsov
    • V. A. Gurtov

    Amorphous, Vitreous, and Porous Semiconductors Pages: 1184 - 1187

22. Space charge limited current in porous silicon and anatase (TiO₂)

    • É. A. Lebedev
    • T. Dittrich

    Amorphous, Vitreous, and Porous Semiconductors Pages: 1188 - 1191

23. Influence of the design and material parameters on the current-voltage characteristics of two-island single-electron chains

    • I. I. Abramov
    • S. A. Ignatenko
    • E. G. Novik

    Physics of Semiconductor Devices Pages: 1192 - 1197