A scientist, a mentor, a soldier I. G. Neizvestnyi This Issue is Dedicated to the Memory of Anatolii Vasil’evich Rzhanov (1920–2000) Pages: 981 - 984
Atomic processes in semiconductor crystals L. S. Smirnov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 985 - 987
Investigation of Ge film growth on the Si(100) surface by recording diffractometry A. I. NikiforovV. A. CherepanovO. P. Pchelyakov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 988 - 991
A study of galvanomagnetic phenomena in MBE-grown n-CdxHg1−x Te films V. S. VaravinA. F. KravchenkoYu. G. Sidorov Electronic and Optical Properties of Semiconductors Pages: 992 - 996
Numerical simulation of intrinsic defects in SiO2 and Si3N4 V. A. GritsenkoYu. N. NovikovYu. N. Morokov Electronic and Optical Properties of Semiconductors Pages: 997 - 1005
Oxidation of semiconductors and the constitution of interfaces S. M. Repinskii Semiconductor Structures, Interfaces, and Surfaces Pages: 1006 - 1017
Diffusion of Cu over a clean Si(111) surface A. E. DolbakR. A. ZhachukB. Z. Olshanetsky Semiconductor Structures, Interfaces, and Surfaces Pages: 1018 - 1021
The simulation of epitaxy, sublimation, and annealing processes in a 3D silicon surface layer A. V. ZverevI. G. NeizvestnyiZ. Sh. Yanovitskaya Semiconductor Structures, Interfaces, and Surfaces Pages: 1022 - 1029
Properties of silicon-on-insulator structures and devices V. P. PopovA. I. AntonovaD. V. Kilanov Semiconductor Structures, Interfaces, and Surfaces Pages: 1030 - 1037
In situ study of the interaction of oxygen with the Si(111) surface by ultrahigh-vacuum reflection electron microscopy S. S. KosolobovA. L. AseevA. V. Latyshev Semiconductor Structures, Interfaces, and Surfaces Pages: 1038 - 1044
Molecular-beam epitaxy of mercury-cadmium-telluride solid solutions on alternative substrates Yu. G. SidorovS. A. DvoretskiiI. V. Sabinina Semiconductor Structures, Interfaces, and Surfaces Pages: 1045 - 1053
Epitaxial growth, electronic properties, and photocathode applications of strained pseudomorphic InGaAsP/GaAs layers V. L. AlperovichYu. B. BolkhovityanovA. S. Yaroshevich Semiconductor Structures, Interfaces, and Surfaces Pages: 1054 - 1062
Electronic properties of InAs-based metal-insulator-semiconductor (MIS) structures G. L. KuryshevA. P. KovchavtsevN. A. Valisheva Semiconductor Structures, Interfaces, and Surfaces Pages: 1063 - 1071
Recombination of point defects and their interaction with the surface in the course of the clusterization of these defects in Si L. I. Fedina Semiconductor Structures, Interfaces, and Surfaces Pages: 1072 - 1080
Spin response of 2D electrons to a lateral electric field L. I. MagarillA. V. ChaplikM. V. Éntin Low-Dimensional Systems Pages: 1081 - 1087
Germanium quantum dots in an unstrained GaAs/ZnSe/Ge/ZnSe heterosystem I. G. NeizvestnyiS. P. SuprunA. V. Efanov Low-Dimensional Systems Pages: 1088 - 1094
Type-II Ge/Si quantum dots A. V. DvurechenskiiA. I. Yakimov Low-Dimensional Systems Pages: 1095 - 1105
Switching characteristics of electron-irradiated MOS-controlled thyristors E. V. ChernyavskiiV. P. PopovL. N. Safronov Physics of Semiconductor Devices Pages: 1106 - 1109
Arrays of 128×128 photodetectors based on HgCdTe layers and multilayer heterostructures with GaAs/AlGaAs quantum wells V. N. OvsyukYu. G. SidorovV. V. Shashkin Physics of Semiconductor Devices Pages: 1110 - 1116