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Epitaxial growth, electronic properties, and photocathode applications of strained pseudomorphic InGaAsP/GaAs layers

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

The results of experimental and theoretical investigations directed toward the development of highly efficient sources of spin-polarized electrons are reported. The sources are based on heteroepitaxial elastically strained films of the quaternary InGaAsP solid solution grown by liquid-phase epitaxy on GaAs substrates. The InGaAsP films synthesized were 0.1–0.2 µm thick with the band gap being within the range of 1.4–1.9 eV and having elastic strains as high as 1%. This provided splitting of the valence band top by 40–60 meV and a degree of the spin polarization P of the electrons photoemitted as high as 80%. The films have a high quantum yield of photoemission Y upon activating to the negative electron affinity state due to the adsorption of Cs and O. Record values for the effective figure of merit P 2 Y are achieved.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia

    V. L. Alperovich, Yu. B. Bolkhovityanov, S. I. Chikichev, A. G. Paulish, A. S. Terekhov & A. S. Yaroshevich

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  1. V. L. Alperovich
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  2. Yu. B. Bolkhovityanov
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  3. S. I. Chikichev
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  4. A. G. Paulish
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  5. A. S. Terekhov
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  6. A. S. Yaroshevich
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 9, 2001, pp. 1102–1110.

Original Russian Text Copyright © 2001 by Alperovich, Bolkhovityanov, Chikichev, Paulish, Terekhov, Yaroshevich.

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Alperovich, V.L., Bolkhovityanov, Y.B., Chikichev, S.I. et al. Epitaxial growth, electronic properties, and photocathode applications of strained pseudomorphic InGaAsP/GaAs layers. Semiconductors 35, 1054–1062 (2001). https://doi.org/10.1134/1.1403570

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  • DOI: https://doi.org/10.1134/1.1403570

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