1. Study of photoluminescence of SiO_xN_y films implanted with Ge⁺ ions and annealed under the conditions of hydrostatic pressure

   • I. E. Tyschenko
   • K. S. Zhuravlev
   • W. Skorupa

   Electronic and Optical Properties of Semiconductors Pages: 125 - 131

2. Quasi-local impurity states in uniaxially compressed p-type Ge

   • A. A. Abramov
   • V. N. Tulupenko
   • D. A. Firsov

   Electronic and Optical Properties of Semiconductors Pages: 132 - 134

3. The effect of stress fields produced by growth defects on the dielectric photoresponse of Cd_1−x Zn_xTe crystals

   • I. A. Klimenko
   • V. K. Komar’
   • D. P. Nalivaiko

   Electronic and Optical Properties of Semiconductors Pages: 135 - 137

4. Nickel impurity excitons and photoinduced lattice distortion in ZnSe_1−y S_y:Ni and Zn_1−x Cd_xSe:Ni solid solutions

   • V. I. Sokolov
   • V. N. Starovoitova

   Electronic and Optical Properties of Semiconductors Pages: 138 - 143

5. The edge ultraviolet luminescence of GaN:Zn films activated in a nitrogen plasma

   • A. N. Georgobiani
   • A. N. Gruzintsev
   • I. I. Khodos

   Electronic and Optical Properties of Semiconductors Pages: 144 - 148

6. Reflection spectra of doped bismuth-antimony crystals in the far-infrared region of the spectrum

   • V. M. Grabov
   • N. P. Stepanov

   Electronic and Optical Properties of Semiconductors Pages: 149 - 152

7. The effect of high-temperature epitaxial SiC layer growth on the structure of porous silicon carbide

   • N. S. Savkina
   • V. V. Ratnikov
   • V. B. Shuman

   Electronic and Optical Properties of Semiconductors Pages: 153 - 157

8. Hopping transport in doped (Pb_0.78Sn_0.22)_1−x In_xTe solid solutions

   • Yu. I. Ravich
   • S. A. Nemov

   Electronic and Optical Properties of Semiconductors Pages: 158 - 163

9. The spread of cross section for electron capture by a trap with a discrete energy level in γ-La₂S₃ crystals

   • E. M. Zobov
   • M. A. Rizakhanov

   Electronic and Optical Properties of Semiconductors Pages: 164 - 169

10. Photoluminescence of Cu_GaTe_As and Cu_GaSn_Ga complexes in n-GaAs under resonance polarized excitation

    • N. S. Averkiev
    • A. A. Gutkin
    • V. E. Sedov

    Electronic and Optical Properties of Semiconductors Pages: 170 - 174

11. Electrical conductivity of n-InSb films in strong electric fields

    • Yu. A. Nikol’skii
    • S. E. Zyuzin

    Electronic and Optical Properties of Semiconductors Pages: 175 - 176

12. Surface gettering of background impurities and defects in GaAs wafers

    • L. S. Vlasenko
    • A. T. Gorelenok
    • N. M. Shmidt

    Electronic and Optical Properties of Semiconductors Pages: 177 - 180

13. Mechanism of reverse current in the Al/p-InP schottky diodes

    • P. A. Pipinys
    • A. K. Rimeika
    • A. V. Pipiniene

    Semiconductor Structures, Interfaces, and Surfaces Pages: 181 - 184

14. Quasi-static ion currents in thin insulating films of metal-insulator-semiconductor structures and the distribution of ions in the films

    • S. G. Dmitriev
    • Yu. V. Markin

    Semiconductor Structures, Interfaces, and Surfaces Pages: 185 - 192

15. Simulation of hysteresis in a metal-ferroelectric-semiconductor structure

    • L. S. Berman

    Semiconductor Structures, Interfaces, and Surfaces Pages: 193 - 195

16. Investigation of a change in the chemical composition of the surface of Cd_xHg_1−x Te samples as a result of treatment by N₂O and H₂ gases activated in a high-frequency discharge

    • V. V. Vasil’ev
    • T. I. Zakhar’yash
    • A. P. Solov’ev

    Semiconductor Structures, Interfaces, and Surfaces Pages: 196 - 198

17. Tunneling via impurity states related to the X valley in a thin AlAs barrier

    • Yu. N. Khanin
    • K. S. Novoselov
    • E. E. Vdovin

    Semiconductor Structures, Interfaces, and Surfaces Pages: 199 - 203

18. Spectra of the field and current oscillations in superlattices exposed to terahertz laser radiation

    • Yu. A. Romanov
    • Yu. Yu. Romanova

    Semiconductor Structures, Interfaces, and Surfaces Pages: 204 - 208

19. Investigation of the SiC/(SiC)_1−x (AlN)_x heterostructures by the method of capacitance-voltage characteristics

    • M. K. Kurbanov
    • B. A. Bilalov
    • G. K. Safaraliev

    Semiconductor Structures, Interfaces, and Surfaces Pages: 209 - 211

20. Electron localization and bloch oscillations in quantum-dot superlattices under a constant electric field

    • I. A. Dmitriev
    • R. A. Suris

    Low-Dimensional Systems Pages: 212 - 219

21. Optical properties of amorphous carbon films deposited by magnetron sputtering of graphite

    • V. I. Ivanov-Omskii
    • A. V. Tolmatchev
    • S. G. Yastrebov

    Amorphous, Vitreous, and Porous Semiconductors Pages: 220 - 225

22. Contrast enhancement in image transfer via interaction of UV radiation with inorganic photoresist films

    • N. A. Kaliteevskaya
    • R. P. Seisyan

    Amorphous, Vitreous, and Porous Semiconductors Pages: 226 - 229

23. Investigation of surface morphology of copper-modified amorphous carbon films

    • T. K. Zvonareva
    • V. I. Ivanov-Omskii
    • V. V. Rozanov

    Amorphous, Vitreous, and Porous Semiconductors Pages: 230 - 234

24. Optical study of InP quantum dots

    • D. A. Vinokurov
    • V. A. Kapitonov
    • I. S. Tarasov

    Amorphous, Vitreous, and Porous Semiconductors Pages: 235 - 237

25. High-power high-voltage bipolar transistors based on complex semiconductor structures

    • M. Yu. Volokobinskii
    • I. N. Komarov
    • A. S. Yastrebov

    Physics of Semiconductor Devices Pages: 238 - 241