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Quasi-local impurity states in uniaxially compressed p-type Ge

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Abstract

The main characteristics of quasi-local levels produced by shallow-level impurity centers (with a screened Coulomb potential) in uniaxially compressed p-Ge were studied theoretically. Stress dependences of positions and widths of the quasi-local impurity states were calculated. Results of the numerical computations for the Ga impurity are presented.

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Authors and Affiliations

  1. Donbass State Engineering Academy, Kramatorsk, 84913, Ukraine

    A. A. Abramov & V. N. Tulupenko

  2. St. Petersburg State Technical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, Russia

    D. A. Firsov

Authors
  1. A. A. Abramov
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  2. V. N. Tulupenko
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  3. D. A. Firsov
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 2, 2001, pp. 136–138.

Original Russian Text Copyright © 2001 by Abramov, Tulupenko, Firsov.

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Abramov, A.A., Tulupenko, V.N. & Firsov, D.A. Quasi-local impurity states in uniaxially compressed p-type Ge. Semiconductors 35, 132–134 (2001). https://doi.org/10.1134/1.1349917

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  • DOI: https://doi.org/10.1134/1.1349917

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