Abstract
The effect of a strong electric field on the electrical conductivity of n-InSb films grown on oxidized silicon substrates was considered. It is established that the electrical conductivity increases with increasing charge-carrier density. The activation energy of charge carriers is estimated from experimental data.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 2, 2001, pp. 182–183.
Original Russian Text Copyright © 2001 by Nikol’ski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Zyuzin.
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Nikol’skii, Y.A., Zyuzin, S.E. Electrical conductivity of n-InSb films in strong electric fields. Semiconductors 35, 175–176 (2001). https://doi.org/10.1134/1.1349926
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DOI: https://doi.org/10.1134/1.1349926