1. Some aspects of SiC CVD epitaxy

   • V. V. Zelenin
   • M. L. Korogodskii
   • A. A. Lebedev

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1117 - 1119

2. The effect of CVD growth conditions of 6H-SiC epilayers on Al incorporation

   • V. V. Zelenin
   • M. L. Korogodskii
   • A. A. Lebedev

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1120 - 1122

3. Analysis of the temperature dependence of electron concentration in CdGeAs₂ single crystals

   • S. I. Borisenko

   Electronic and Optical Properties of Semiconductors Pages: 1123 - 1125

4. Nonlinear and dynamic properties of charge transport in polycrystalline silicon under optical illumination

   • K. M. Doshchanov

   Electronic and Optical Properties of Semiconductors Pages: 1126 - 1131

5. Specific features of the liquid-phase epitaxial growth of SiC epilayers in vacuum

   • D. A. Bauman
   • A. V. Gavrilin
   • N. I. Kuznetsov

   Electronic and Optical Properties of Semiconductors Pages: 1132 - 1134

6. Nonadditive photoconductivity and induced states in zinc selenide crystals

   • V. P. Migal’

   Electronic and Optical Properties of Semiconductors Pages: 1135 - 1138

7. Electrical and photoelectric properties of polycrystalline textured CdTe

   • Yu. V. Klevkov
   • S. A. Kolosov
   • A. F. Plotnikov

   Electronic and Optical Properties of Semiconductors Pages: 1139 - 1143

8. Density of localized states in (Pb_0.78Sn_0.22)_0.95In_0.05Te solid solutions

   • S. A. Nemov
   • D. A. Potapova
   • S. D. Khanin

   Electronic and Optical Properties of Semiconductors Pages: 1144 - 1146

9. Interference of polarized beams near the isotropic point of the CdS crystal

   • I. V. Brovchenko
   • V. I. Romanenko
   • V. I. Tovstenko

   Electronic and Optical Properties of Semiconductors Pages: 1147 - 1150

10. Random potential relief and extrinsic photoconductivity of compensated germanium

    • Yu. P. Druzhinin
    • E. G. Chirkova

    Electronic and Optical Properties of Semiconductors Pages: 1151 - 1154

11. Photocapacitance effect at low temperatures in a unipolar MIS capacitor with a semiconductor electrode doped with two different acceptor impurities

    • N. A. Penin

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1155 - 1160

12. Thermoelectric figure of merit of a p-n junction

    • Yu. I. Ravich
    • D. A. Pshenai-Severin

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1161 - 1165

13. The influence of the illumination direction on the field distribution in high-resistivity metal-semiconductor structures

    • B. I. Reznikov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1166 - 1170

14. Effect of the annealing temperature on erbium ion electroluminescence in Si:(Er,O) diodes with (111) substrate orientation

    • N. A. Sobolev
    • A. M. Emel’yanov
    • Yu. A. Nikolaev

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1171 - 1174

15. Study of electron capture by quantum dots using deep-level transient spectroscopy

    • M. M. Sobolev
    • I. V. Kochnev
    • N. N. Ledentsov

    Low-Dimensional Systems Pages: 1175 - 1181

16. The role of nitrogen in the formation of luminescent silicon nanoprecipitates during heat treatment of SiO₂ layers implanted with Si⁺ ions

    • G. A. Kachurin
    • S. G. Yanovskaya
    • M. -O. Ruault

    Low-Dimensional Systems Pages: 1182 - 1186

17. Special features of photoelectric properties of nanostructured films of hydrogenated silicon

    • O. A. Golikova
    • M. M. Kazanin

    Amorphous, Vitreous, and Porous Semiconductors Pages: 1187 - 1190

18. Numerical calculation of the temperature dependences of photoconductivity in the p-type a-Si:H

    • S. V. Kuznetsov

    Amorphous, Vitreous, and Porous Semiconductors Pages: 1191 - 1196

19. Effect of doping with nitrogen on electrical properties and erbium electroluminescence of a-Si:H(Er) films

    • O. I. Kon’kov
    • E. I. Terukov
    • L. S. Granitsyna

    Amorphous, Vitreous, and Porous Semiconductors Pages: 1197 - 1202

20. Difference mode generation in injection lasers

    • V. Ya. Aleshkin
    • A. A. Afonenko
    • N. B. Zvonkov

    Physics of Semiconductor Devices Pages: 1203 - 1207

21. High power InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.3 µm)

    • M. Aydaraliev
    • N. V. Zotova
    • G. N. Talalakin

    Physics of Semiconductor Devices Pages: 1208 - 1212

22. Fabry-Perot a-Si:H/a-SiO_x:H microcavities with an erbium-doped a-Si:H active layer

    • V. G. Golubev
    • A. A. Dukin
    • N. A. Feoktistov

    Physics of Semiconductor Devices Pages: 1213 - 1221