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Analysis of the temperature dependence of electron concentration in CdGeAs2 single crystals

  • Electronic and Optical Properties of Semiconductors
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Abstract

The temperature dependence of electron concentration in CdGeAs2 single crystals grown by a new method is analyzed. The concentration of native defects and the activation energy are calculated. It is shown that the activation energy has a resonance character, and the concentration of native defects in the temperature range studied (10–500 K) far exceeds the electron concentration.

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References

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Authors and Affiliations

  1. Siberian Physicotechnical Institute, Tomsk, 634050, Russia

    S. I. Borisenko

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  1. S. I. Borisenko
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 10, 2001, pp. 1175–1177.

Original Russian Text Copyright © 2001 by Borisenko.

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Borisenko, S.I. Analysis of the temperature dependence of electron concentration in CdGeAs2 single crystals. Semiconductors 35, 1123–1125 (2001). https://doi.org/10.1134/1.1410648

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  • DOI: https://doi.org/10.1134/1.1410648

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