Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0–1.6 µm V. Yu. DavydovV. V. LundinE. O. Parshin Electronic and Optical Properties of Semiconductors Pages: 1 - 5
Thermally stimulated currents and instabilities of the photoresponse in PbTe(In) alloys at low temperatures B. A. AkimovV. A. BogoyavlenskiiE. I. Slyn’ko Electronic and Optical Properties of Semiconductors Pages: 6 - 9
Influence of the energy transport of electrons by optical phonon emission on the superluminescence and reversible bleaching of a thin GaAs layer excited by a strong picosecond light pulse I. L. BronevoiA. N. Krivonosov Electronic and Optical Properties of Semiconductors Pages: 10 - 14
Fano effect in the magnetoabsorption spectra of gallium arsenide D. V. VasilenkoN. V. Luk’yanovaR. P. Seisyan Electronic and Optical Properties of Semiconductors Pages: 15 - 19
Correlation between the material parameters and conditions for the excitation of recombination waves in Si〈;S〉 M. K. BakhadyrkhanovU. Kh. KurbanovaN. F. Zikrillaev Electronic and Optical Properties of Semiconductors Pages: 20 - 21
Self-compensation in PbSe:Tl thin films V. A. ZykovT. A. GavrikovaP. A. Osipov Electronic and Optical Properties of Semiconductors Pages: 22 - 25
Electronic structure of C60 films V. V. SobolevE. L. Busypina Electronic and Optical Properties of Semiconductors Pages: 26 - 30
Quasi-gapless semiconductor: p-type indium arsenide M. I. DaunovI. K. KamilovA. Sh. Kirakosyan Electronic and Optical Properties of Semiconductors Pages: 31 - 33
Optical absorption in PbGa2Se4 single crystals B. G. TagievN. N. MusaevaR. B. Dzhabbarov Electronic and Optical Properties of Semiconductors Pages: 34 - 36
Characteristic features of the temperature dependence of the photoluminescence polarization of {Ga vacancy}-SnGa(SiGa) complexes in GaAs produced as a result of resonant polarized excitation A. A. GutkinM. A. ReshchikovV. E. Sedov Electronic and Optical Properties of Semiconductors Pages: 37 - 40
Photoconductivity spectra of CdHgTe crystals with photoactive inclusions A. I. VlasenkoZ. K. VlasenkoA. V. Lyubchenko Electronic and Optical Properties of Semiconductors Pages: 41 - 44
Theory of photovoltaic effects in crystals without an inversion center R. Ya. RasulovYu. E. SalenkoA. É. Avliyaev Electronic and Optical Properties of Semiconductors Pages: 45 - 50
Ultrashallow p +-n junctions in Si(111): Electron-beam diagnostics of the surface region N. T. BagraevL. E. KlyachkinS. V. Robozerov Semiconductor Structures, Interfaces and Surfaces Pages: 51 - 55
Investigating the photosensitivity spectra of n-type GaAs-As2Se3 heterojunctions I. P. ArzhanukhinaK. P. KornevU. V. Seleznev Semiconductor Structures, Interfaces and Surfaces Pages: 56 - 59
Charging of deep-level centers and negative persistent photoconductivity in modulationdoped AlGaAs/GaAs heterostructures V. I. BorisovV. A. SablikovA. I. Chmil’ Low-Dimensional Systems Pages: 60 - 65
Conductivity of thin nanocrystalline silicon films V. G. GolubevL. E. MorozovaN. A. Feoktistov Low-Dimensional Systems Pages: 66 - 68
Vertical screening in doped, intentionally disordered semiconductor superlattices I. P. ZvyaginM. A. Ormont Low-Dimensional Systems Pages: 69 - 71
Optical intersubband transitions in strained quantum wells utilizing In1−x GaxAs/InP solid solutions S. A. StoklitskiiV. N. MurzinP. O. Holtz Low-Dimensional Systems Pages: 72 - 79
Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix Zhao ZhenD. A. BedarevP. S. Kop’ev Low-Dimensional Systems Pages: 80 - 84
Nonradiative recombination at shallow bound states in quantum-confined systems in an electric field É. P. SinyavskiiA. M. Rusanov Low-Dimensional Systems Pages: 85 - 88
Radiative tunneling recombination and luminescence of trapezoidal δ-doped superlattices V. V. OsipovA. Yu. SelyakovM. Foygel Low-Dimensional Systems Pages: 89 - 92
Influence of thermal annealing on the intensity of the 1.54-µm photoluminescence band in erbium-doped amorphous hydrogenated silicon A. A. AndreevV. B. VoronkovA. B. Pevtsov Amorphous, Glassy, and Porous Semiconductors Pages: 93 - 96
Amorphous hydrogenated silicon films exhibiting enhanced photosensitivity O. A. GolikovaM. M. Kazanin Amorphous, Glassy, and Porous Semiconductors Pages: 97 - 100
Effect of ion implantation on redistribution of erbium during solid-phase epitaxial crystallization of silicon O. V. AleksandrovYu. A. NikolaevN. A. Sobolev Amorphous, Glassy, and Porous Semiconductors Pages: 101 - 105