Abstract
Data on the Hall coefficient R and the resistivity ρ as functions of the magnetic field (to H=12 kOe) and electric field (to E=25 V/cm) in a heavily doped, compensated semiconductor p-type InAs with a density of excess acceptors N ext=(N A −N D )⋍1016 cm−3 and a ratio N A /N D ⋍0.9 are used to calculate the characteristic carrier parameters at hydrostatic pressures up to P=1.5 Pa and temperatures T=77.6 and 300 K. It is found that a deep acceptor band is situated in the tail of the density of states of the conduction band, and a state of the heavily doped, fully compensated semiconductor type is established at low temperatures.
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Fiz. Tekh. Poluprovodn. 33, 36–38 (January 1999)
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Daunov, M.I., Kamilov, I.K., Magomedov, A.B. et al. Quasi-gapless semiconductor: p-type indium arsenide. Semiconductors 33, 31–33 (1999). https://doi.org/10.1134/1.1187889
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DOI: https://doi.org/10.1134/1.1187889