1. Distribution of hydrogen in silicon and silicon carbide following high-temperature proton irradiation

   • V. V. Kozlovskii
   • V. A. Kozlov

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 1265 - 1266

2. Electronic properties of ZnGeP₂ crystals obtained by a solid-phase reaction

   • A. A. Vaipolin
   • Yu. V. Rud’
   • V. Yu. Rud’

   Electronic and Optical Properties of Semiconductors Pages: 1267 - 1271

3. Behavior of manganese impurities in Hg₃In₂Te₆

   • O. G. Grushka
   • Z. M. Grushka
   • V. S. Gerasimenko

   Electronic and Optical Properties of Semiconductors Pages: 1272 - 1275

4. Photoelectric properties of Hg_1−x Cd_xTe single crystals grown from the vapor phase

   • S. S. Varshava
   • I. V. Kurilo
   • D. I. Tsyutsyura

   Electronic and Optical Properties of Semiconductors Pages: 1276 - 1278

5. Nature of the nuclei for thermal donor formation in silicon (or another variant of accelerated oxygen diffusion)

   • V. B. Neimash
   • E. A. Puzenko
   • N. N. Kras’ko

   Electronic and Optical Properties of Semiconductors Pages: 1279 - 1283

6. Donor-acceptor photoluminescence of weakly compensated GaN:Mg

   • V. Yu. Nekrasov
   • L. V. Belyakov
   • N. N. Zinov’ev

   Electronic and Optical Properties of Semiconductors Pages: 1284 - 1290

7. Cascade capture of electrons by dislocations in many-valley semiconductors

   • Z. A. Veliev

   Electronic and Optical Properties of Semiconductors Pages: 1291 - 1292

8. Electrical properties of Hg_1−x Mn_xTe-based photodiodes

   • L. A. Kosyachenko
   • I. M. Rarenko
   • Weiguo Sun

   Semiconductors Structures, Interface, and Surfaces Pages: 1293 - 1296

9. Drag current for ionization of impurities by an electromagnetic wave in a semiconductor superlattice

   • M. V. Vyazovskii
   • G. A. Syrodoev

   Semiconductors Structures, Interface, and Surfaces Pages: 1297 - 1300

   

10. Position of the Fermi level on an indium arsenide surface treated in sulfur vapor

    • N. N. Bezryadin
    • E. A. Tatokhin
    • I. N. Arsent’ev

    Semiconductors Structures, Interface, and Surfaces Pages: 1301 - 1303

11. Effect of anisotropy of band structure on optical gain in spherical quantum dots based on PbS and PbSe

    • A. D. Andreev
    • A. A. Lipovskii

    Low-Dimensional Systems Pages: 1304 - 1308

12. Superradiance in semiconductors

    • S. V. Zaitsev
    • L. A. Graham
    • P. S. Kop’ev

    Low-Dimensional Systems Pages: 1309 - 1314

13. Effect of γ irradiation on the photoluminescence kinetics of porous silicon

    • V. F. Agekyan
    • Yu. A. Stepanov
    • A. D. Remenyuk

    Amorphous, Glassy, and Porous Semiconductors Pages: 1315 - 1317

14. Photodetectors based on osmium-doped silicon

    • M. S. Yunusov
    • R. A. Muminov
    • A. Kholboev

    Physics of Semiconductor Devices Pages: 1318 - 1319

15. Effect of liquid dielectrics on the efficiency of silicon solar cells

    • Yu. A. Abramyan
    • G. G. Karamyan
    • V. I. Serago

    Physics of Semiconductor Devices Pages: 1320 - 1321

16. Two-mode diode-laser spectroscopy with a InAsSb/InAsSbP laser near 3.6 µm

    • A. P. Danilova
    • A. N. Imenkov
    • S. Civis

    Physics of Semiconductor Devices Pages: 1322 - 1327

17. Nonpolarizing radiation detectors based on wide-gap semiconductor crystals

    • P. G. Kasherininov
    • A. N. Lodygin
    • V. S. Khrunov

    Physics of Semiconductor Devices Pages: 1328 - 1330