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Distribution of hydrogen in silicon and silicon carbide following high-temperature proton irradiation

  • Atomic Structure and Non-Electronic Properties of Semiconductors
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Abstract

The distribution of hydrogen in Si and SiC following high-temperature proton irradiation (T irr=20–700 °C) is studied by secondary-ion mass spectrometry. It is shown that the hydrogen concentration profile in SiC depends weakly on irradiation temperature. In Si appreciable alteration of the concentration profile is observed already at T irr⋍300 °C, and the profile completely loses its concentration gradient at T irr⋍700 °C.

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Authors and Affiliations

  1. St. Petersburg State Technical University, 195251, St. Petersburg, Russia

    V. V. Kozlovskii

  2. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    V. A. Kozlov

Authors
  1. V. V. Kozlovskii
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  2. V. A. Kozlov
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Additional information

Fiz. Tekh. Poluprovodn. 33, 1409–1410 (December 1999)

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Kozlovskii, V.V., Kozlov, V.A. Distribution of hydrogen in silicon and silicon carbide following high-temperature proton irradiation. Semiconductors 33, 1265–1266 (1999). https://doi.org/10.1134/1.1187903

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  • DOI: https://doi.org/10.1134/1.1187903

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