Pressure-induced formation of thermal donor centers in silicon after oxygen ion bombardment I. V. AntonovaV. P. PopovA. Misuk Atomic Structure and Non-Electric Properties of Semiconductors Pages: 1049 - 1053
Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic G. É. TsirlinV. N. PetrovV. M. Ustinov Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 1054 - 1058
Detection of paramagnetic recombination centers in proton-irradiated silicon L. S. VlasenkoM. P. VlasenkoV. V. Kozlovskii Electronic and Optical Properties of Semiconductors Pages: 1059 - 1061
Luminescence properties of InAs layers and p-n structures grown by metallorganic chemical vapor deposition T. I. VoroninaN. V. ZotovaYu. P. Yakovlev Electronic and Optical Properties of Semiconductors Pages: 1062 - 1066
Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy A. S. ZubrilovYu. V. MelnikV. A. Dmitriev Electronic and Optical Properties of Semiconductors Pages: 1067 - 1071
The energy spectrum of lead selenide implanted with oxygen A. N. VeisN. A. Suvorova Electronic and Optical Properties of Semiconductors Pages: 1072 - 1075
Autosolitons in an electron-hole plasma/excitons system in silicon at 4.2K A. M. Musaev Electronic and Optical Properties of Semiconductors Pages: 1076 - 1079
Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures A. E. KunitsynV. V. ChaldyshevB. R. Semyagin Electronic and Optical Properties of Semiconductors Pages: 1080 - 1083
Oxygen and Erbium related donor centers in Czochralski grown silicon implanted with erbium V. V. EmtsevV. V. Emtsev Jr.L. C. Kimerling Electronic and Optical Properties of Semiconductors Pages: 1084 - 1087
Electronic properties of a GaAs surface treated with hydrochloric acid E. F. VengerS. I. KirillovaV. E. Primachenko Semiconductor Structures, Interfaces and Surfaces Pages: 1088 - 1092
Photoconversion in heterocontacts of CdTe and its analogs with protein Yu. V. Rud’V. Yu. Rud’G. A. Il’chuk Semiconductor Structures, Interfaces, and Surfaces Pages: 1093 - 1096
Fabrication and photosensitivity of AgInSe2/III-VI isotypic heterojunctions V. Yu. Rud’V. F. GremenokI. V. Bodnar’ Semiconductor Structures, Interfaces, and Surfaces Pages: 1097 - 1099
Influence of atomic-hydrogen treatment on the surface properties of n-n + GaAs structures N. A. TorkhovS. V. Eremeev Semiconductor Structures, Interfaces, and Surfaces Pages: 1100 - 1107
Production and properties of In/HgGa2S4 Schottky barriers V. Yu. Rud’Yu. V. Rud’P. G. Schunemann Semiconductor Structures, Interfaces, and Surfaces Pages: 1108 - 1110
Effect of hydrogen on the current-voltage characteristics of Pd/p-InGaAsP and Pd/n-InGaAs barrier structures V. P. VoronkovL. S. Khludkova Semiconductor Structures, Interfaces, and Surfaces Pages: 1111 - 1114
Determination of the electron mobility and density in thin semiconductor films at microwave frequencies using the magnetoplasma resonance P. A. BorodovskiiA. F. Buldygin Low-Dimensional System Pages: 1115 - 1118
Modeling of the electron distribution in AlGaAs/GaAs (δ-Si) structures grown on vicinal surfaces V. M. Osadchii Low-Dimensional Systems Pages: 1119 - 1120
Effect of the configuration of a quantum wire on the electron-phonon interaction O. V. Kibis Low-Dimensional Systems Pages: 1121 - 1123
Inelastic scattering of hot electrons by neutral donors in heavily silicon-doped GaAs/AlAs quantum wells I. A. AkimovV. F. SapegaA. A. Sirenko Low-Dimensional Systems Pages: 1124 - 1127
Momentum relaxation time and temperature dependence of electron mobility in semiconductor superlattices consisting of weakly interacting quantum wells S. I. Borisenko Low-Dimensional Systems Pages: 1128 - 1132
Determination of the density of states in quantum wells and quantum dot arrays by the capacitance-voltage method V. Ya. AleshkinN. A. BekinB. N. Zvonkov Low-Dimensional Systems Pages: 1133 - 1138
Role of impurities in the formation of silicyne (long-chain silicon): Theory and experiment A. I. MashinA. F. KhokhlovA. G. Razuvaev Amorphous, Glassy and Porous Semiconductors Pages: 1139 - 1144
Formation of optically active centers in films of erbium-doped amorphous hydrated silicon M. M. MezdroginaM. P. AnnaorazovaN. Nazarov Amorphous, Glassy, and Porous Semiconductors Pages: 1145 - 1148
Variation of the parameters and composition of thin films of porous silicon as a result of oxidation: Ellipsometric studies E. V. AstrovaV. B. VoronkovV. A. Tolmachev Amorphous, Glassy, and Porous Semiconductors Pages: 1149 - 1155
