Skip to main content
SpringerLink
Log in

Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic

  • Atomic Structure and Non-Electronic Properties of Semiconductors
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

The authors of this paper discuss their studies of the influence of background arsenic pressure on the properties of autoepitaxial layers of silicon grown on Si (100) surfaces by molecular-beam epitaxy. In these investigations the following experimental techniques were used: reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. G. Franzo, F. Priolo, S. Coffa, A. Polman, and A. Carnera, Appl. Phys. Lett. 64, 2235 (1994).

    ADS  Google Scholar 

  2. K. Eberl, K. Brunner, and W. Winter, Thin Solid Films 249, 98 (1997).

    Google Scholar 

  3. A. G. Gullis, L. T. Canha, and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997).

    ADS  Google Scholar 

  4. G. E. Tsyrlin, V. N. Petrov, V. G. Dubrovskii, S. A. Masalov, A. O. Golubok, N. I. Komyak, N. N. Ledentsov, Zh. I. Alferov, and D. Bimberg, Pis’ma Zh. Tekh. Fiz. Lett. 24(8), 13 (1998) [Tech. Phys. Lett. 24, 628 (1998)].

    Google Scholar 

  5. G. E. Cirlin, V. G. Dubrovskii, V. N. Petrov, N. K. Polyakov, N. P. Korneeva, V. N. Demidov, A. O. Golubok, S. A. Masalov, D. V. Kurochkin, O. M. Gorbenko, N. I. Komyak, V. M. Ustinov, A. Yu. Egorov, A. R. Kovsh, M. V. Maximov, A. F. Tsatsul’nikov, B. V. Volovik, A. E. Zhukov, P. S. Kop’ev, Zh. I. Alferov, N. N. Ledentsov, M. Grundmann, and D. Bimberg, Semicond. Sci. Technol. 13, 1262 (1998).

    Article  ADS  Google Scholar 

  6. N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin, P. S. Kop’ev, Zh. I. Alferov, and D. Bimberg, Fiz. Tekh. Poluprovodn. 32, 385 (1998) [Semiconductors 32, 343 (1998)].

    Google Scholar 

  7. A. F. Tsatsul’nikov, A. Yu. Egorov, P. S. Kop’ev, A. R. Kovsh, M. V. Maximov, V. M. Ustinov, B. V. Volovik, A. E. Zhukov, Zh. I. Alferov, G. E. Cirlin, A. O. Golubok, S. A. Masalov, V. N. Petrov, N. N. Ledentsov, R. Heitz, M. Grundmann, D. Bimberg, I. P. Soshnikov, P. Werner, and U. Gösele, in Proceedings of the 24th International Conference in Physics of Semiconductors, Jerusalem, 1998 (World Scientific, Singapore, 1999) [in press].

    Google Scholar 

  8. A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, A. E. Zhukov, M. V. Maksimov, G. E. Cirlin, N. N. Ledentsov, D. Bimberg, P. Werner, and Zh. I. Alferov, J. Cryst. Growth (1999) [in press].

  9. J. Tersoff, C. Teichert, and M. G. Lagally, Phys. Rev. Lett. 76, 1675 (1996).

    Article  ADS  Google Scholar 

  10. A. Ishisaka and Y. Shiraki, J. Electrochem. Soc. 133, 666 (1986).

    Google Scholar 

  11. V. A. Ioshkin, A. A. Orlikovskii, S. R. Oktyabr’skii, A. V. Kvit, and E. Yu. Dovydenko, Proceedings FTIAN (Nauka, Moscow, 1994), Vol. 8, p. 58.

    Google Scholar 

  12. G. M. Gur’yanov, V. N. Demidov, N. N. Korneeva, V. N. Petrov, Yu. V. Samsonenko, and G. E. Tsyrlin, Zh. Tekh. Fiz. 67, 111 (1997) [Tech. Phys. 67, 956 (1997)].

    Google Scholar 

  13. A. O. Golubok, S. A. Masalov, N. V. Ponomareva, V. N. Petrov, S. Ya. Tipisev, and G. E. Tsyrlin, Surfaces: X-Ray, Synchrotron, and Neutron Investigations, Vol. 2, 70 (1998).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute for Analytical Instrumentation, Russian Academy of Sciences, 198103, St. Petersburg, Russia

    G. É. Tsirlin, V. N. Petrov, N. K. Polyakov, S. A. Masalov & A. O. Golubok

  2. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    D. V. Denisov, Yu. A. Kudryavtsev, B. Ya. Ber & V. M. Ustinov

Authors
  1. G. É. Tsirlin
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. N. Petrov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. N. K. Polyakov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. S. A. Masalov
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. A. O. Golubok
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. D. V. Denisov
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Yu. A. Kudryavtsev
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. B. Ya. Ber
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. V. M. Ustinov
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Fiz. Tekh. Poluprovodn. 33, 1158–1163 (October 1999)

Rights and permissions

Reprints and permissions

About this article

Cite this article

Tsirlin, G.É., Petrov, V.N., Polyakov, N.K. et al. Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic. Semiconductors 33, 1054–1058 (1999). https://doi.org/10.1134/1.1187863

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1187863

Keywords

Search

Navigation