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Crystallisation kinetics and density profiles in ultra-thin hafnia films

Crystallisation and structure of HfO\(\mathsf{_2}\) films

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Abstract.

Crystallisation onset temperatures as a function of chlorine contamination have been determined by grazing incidence diffraction on as-deposited ultra-thin HfO2 films grown by Atomic Layer Deposition. The onset temperatures are positively correlated with chlorine content, suggesting defect-hindered crystallisation kinetics. Density profiles have been deduced by reflectometry measurements and a model independent analysis scheme. It is shown that the HfO2/SiO2-Si interface is electronically denser than the bulk of the HfO2 film.

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Authors and Affiliations

  1. Institut Européen des Membranes, UM-II cc047, 34095, Montpellier Cedex 5, France

    A. van der Lee & J. Durand

  2. ASM France, 1025 rue Henri Becquerel, 34036, Montpellier Cedex 1, France

    D. Blin

  3. CEA-DRT-LETI, 17 rue des Martyrs, 38054, Grenoble Cedex 9, France

    Ph. Holliger & F. Martin

Authors
  1. A. van der Lee
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  2. J. Durand
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  3. D. Blin
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  4. Ph. Holliger
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  5. F. Martin
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Corresponding author

Correspondence to A. van der Lee.

Additional information

Received: 8 March 2004, Published online: 29 June 2004

PACS:

68.35.Ct Interface structure and roughness - 68.55.Jk Structure and morphology; thickness; crystalline orientation and texture - 64.70.Nd Structural transitions in nanoscale materials

D. Blin: Present address: Jusung Europe, 12 boulevard Gambetta, BP 371, 38014 Grenoble, France

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van der Lee, A., Durand, J., Blin, D. et al. Crystallisation kinetics and density profiles in ultra-thin hafnia films. Eur. Phys. J. B 39, 273–277 (2004). https://doi.org/10.1140/epjb/e2004-00190-1

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  • DOI: https://doi.org/10.1140/epjb/e2004-00190-1

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