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Formation of Pores in Thin Germanium Films under Implantation by Ge+ Ions

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Abstract

Results are presented of a study of the morphology of germanium films nanostructured by ion implantation. Film samples were grown by magnetron sputtering in an ultrahigh-vacuum installation and then irradiated with 40 keV Ge+ ions at fluences in the range of (1.8–8) × 1016 ions/cm2. Scanning electron microscopy demonstrated that vacancy complexes with diameters of ~50–150 nm are gradually formed in the bulk of implanted germanium with increasing implantation fluence. After a certain implantation fluence is reached, the complexes emerge on the surface, thereby forming a developed surface profile of the irradiated films.

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Funding

The study was supported by the Russian Science Foundation, project no. 19-79-10216.

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Authors and Affiliations

  1. E. K. Zavoisky Kazan Physical Technical Institute, Kazan Research Center, Russian Academy of Sciences, 420029, Kazan, Tatarstan, Russia

    N. M. Lyadov, T. P. Gavrilova, S. M. Khantimerov, V. V. Bazarov, N. M. Suleimanov, V. A. Shustov, V. I. Nuzhdin, I. A. Faizrakhmanov & L. R. Tagirov

  2. Institute of Physics, Kazan Federal University, 420008, Kazan, Tatarstan, Russia

    I. V. Yanilkin, A. I. Gumarov & L. R. Tagirov

Authors
  1. N. M. Lyadov
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  2. T. P. Gavrilova
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  3. S. M. Khantimerov
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  4. V. V. Bazarov
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  5. N. M. Suleimanov
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  6. V. A. Shustov
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  7. V. I. Nuzhdin
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  8. I. V. Yanilkin
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  9. A. I. Gumarov
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  10. I. A. Faizrakhmanov
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  11. L. R. Tagirov
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Corresponding author

Correspondence to N. M. Lyadov.

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The authors declare that they have no conflict of interest.

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Translated by M. Tagirdzhanov

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Lyadov, N.M., Gavrilova, T.P., Khantimerov, S.M. et al. Formation of Pores in Thin Germanium Films under Implantation by Ge+ Ions. Tech. Phys. Lett. 46, 707–709 (2020). https://doi.org/10.1134/S1063785020070196

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  • DOI: https://doi.org/10.1134/S1063785020070196

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