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Ion Beam Synthesis of Germanium Nanocrystals—A Fluence Dependence Study

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Advanced Nanomaterials and Their Applications (ICANA 2022)

Part of the book series: Springer Proceedings in Materials ((SPM,volume 22))

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Abstract

The synthesis of Ge nanocrystals (NCs) by using ion implantation method is reported here along with the results from different spectroscopic and microscopic characterizations such as Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), Raman spectroscopy, photoluminescence (PL), and atomic force microscopy (AFM). Various fluences of 1 MeV Ge ions have been implanted into SiO2, and then, as-implanted samples were annealed using rapid thermal annealing system for the synthesis of Ge NCs. The Ge NCs presence was confirmed from Raman spectroscopy and XRD measurements. The low-fluence implanted sample did not show any signature of Ge NCs, whereas Ge NCs presence has been observed in the high-fluence implanted sample after annealing. The mechanism of Ge NCs formation in the as-implanted samples after annealing has been discussed.

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Acknowledgements

VS acknowledges funding received from UGC and SERB through grants UGC-F.30-456/2018(BSR) and SERB-SRG/2019/001830. APP acknowledges National Academy of Sciences, Prayagraj for award of NASI Senior Scientist Platinum Jubilee Fellowship. We are thankful to UGC NRC Centre of School of Physics at UOHYD for extending Raman and XRD facilities.

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Authors and Affiliations

  1. Department of Physics, School of Sciences, GITAM Deemed to be University, Visakhapatnam, Andhra Pradesh, 530045, India

    V. Saikiran & G. Neelima

  2. Department of Physics, Malaviya National Institute of Technology Jaipur, Jaipur, 302017, India

    N. Srinivasa Rao

  3. School of Physics, University of Hyderabad, Hyderabad, 500046, India

    A. P. Pathak

Authors
  1. V. Saikiran
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  2. G. Neelima
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  3. N. Srinivasa Rao
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  4. A. P. Pathak
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Corresponding author

Correspondence to V. Saikiran .

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Editors and Affiliations

  1. School of Advanced Sciences, VIT-AP University, Amaravati, Andhra Pradesh, India

    N. Madhusudhana Rao

  2. Department of Polymers and Functional Materials, CSIR-Indian Institute of Chemical Technology, Hyderabad, India

    Giribabu Lingamallu

  3. Department of Mechanical and Energy Engineering, Indiana University-Purdue University Indianapolis, Indianapolis, IN, USA

    Mangilal Agarwal

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© 2023 The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.

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Saikiran, V., Neelima, G., Rao, N.S., Pathak, A.P. (2023). Ion Beam Synthesis of Germanium Nanocrystals—A Fluence Dependence Study. In: Rao, N.M., Lingamallu, G., Agarwal, M. (eds) Advanced Nanomaterials and Their Applications. ICANA 2022. Springer Proceedings in Materials, vol 22. Springer, Singapore. https://doi.org/10.1007/978-981-99-1616-0_1

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