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Study on impact ionization in charge layer of InP/InGaAs SAGCM avalanche photodiodes

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Abstract

Impact ionization in charge layer of InP/InGaAs separated absorption, grading, charge and multiplication avalanche photodiodes (SAGCM APDs) has been studied by analytical-band Monte Carlo (MC) simulations. The mean ionization coefficients are derived by MC model and compared with the mean ionization coefficients calculated from electric-field-dependent ionization coefficient. And modification of ionization coefficient is made to extend the ionization-coefficient-based models for the simulations of charge layer in SAGCM APDs, which releases intensive calculation in structure optimization by MC simulations.

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Acknowledgments

This work was supported by the National Hi-Tech Research and Development Program of China (Grand No. 2008AA01Z207), Natural Science Foundation of Hubei Province, China (Grant No. 2010CDB01606), Fundamental Research Funds for the Central Universities (2014KXYQ013), Huawei Innovation Research Program (YJCB2010032NW, YB2012120133, YB2014010026) and Scientific Research Foundation for the Returned Overseas Chinese Scholars.

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  1. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China

    Shibo Zhang & Yanli Zhao

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  1. Shibo Zhang
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  2. Yanli Zhao
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Correspondence to Yanli Zhao.

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Zhang, S., Zhao, Y. Study on impact ionization in charge layer of InP/InGaAs SAGCM avalanche photodiodes. Opt Quant Electron 47, 2689–2696 (2015). https://doi.org/10.1007/s11082-015-0155-9

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  • DOI: https://doi.org/10.1007/s11082-015-0155-9

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