Abstract
A Monte Carlo model using random ionization path lengths describing the carriers quantum transport in thin gallium nitride/silicon carbide (GaN/4H-SiC) heterojunction avalanche photodiodes (HAPDs) for ultraviolet detection is developed. This work simulated the multiplication gain and excess noise factor at multiplication width of w = 0.05 µm, 0.1 µm, 0.2 µm, 0.3 µm and 0.48 μm for both electron- and hole-initiated multiplication incorporating the dead space effect and hetero-interface effects on impact ionization coefficients and carrier feedback process at high electric field region. The carriers injected into the first layer undergo multiplication with material dependent electron and hole impact ionization coefficients α1 and β1. After traversing the first layer, the carriers enter the second layer based on their probability to cross the heterojunction. The carriers enter the second layer then undergoes the multiplication with α2 and β2 depending on material in second layer. The avalanche characteristics for different multiplication width ratio of GaN to 4H-SiC in multiplication region are investigated. Our work shows that the excess noise can be reduced by manipulating the multiplication width ratio of GaN to 4H-SiC in multiplication region. The hole-initiated 4H-SiC/GaN APDs with 0.9w 4H-SiC and 0.1w GaN demonstrates the lowest noise besides higher gain with lower applied voltage.
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Akturk, A., Goldsman, N., Potbhare, S., Lelis, A.: High field density-functional-theory based Monte Carlo: 4H-SiC impact ionization and velocity saturation. J. Appl. Phys. 105, 033703-1-7 (2009)
Alaie, Z., Nejad, S.M., Yousefi, M.H.: Recent advances in ultraviolet photodetectors. Mater. Sci. Semicond. Process. 29, 16–55 (2015)
Cheang, P.L., Wong, E.K., Teo, L.L.: Avalanche characteristics in thin GaN avalanche photodiodes. Jpn. J. Appl. Phys. 58, 082001-1-6 (2019)
Cicek, E., Vashaei, Z., McClintock, R., Bayram, C., Razeghi, M.: Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates. Appl. Phys. Lett. 96, 261107-1-3 (2010)
Ghosh, A., Ghosh, K.K.: Monte Carlo simulation of excess noise in heterojunction avalanche photodetector. Opt. Quantum Electron. 40, 439–446 (2008)
Guo, X., Rowland, L.B., Dunne, G.T., Fronheiser, J.A., Sandvik, P.M., Beck, A.L., Campbell, J.C.: Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes. IEEE Photon. Technol. Lett. 18(1), 136–138 (2006)
Hayat, M.M., Kwon, O.H., Wang, S., Campbell, J.C., Saleh, B.E.A., Teich, M.C.: Boundary effects on multiplication noise in thin heterostructure avalanche photodiodes: theory and Experiment. IEEE Trans. Electron Devices 49, 2114–2123 (2002)
Konstantinov, A.O., Wahab, Q., Nordell, N., Lindefelt, U.: Study of avalanche breakdown and impact ionization in 4H silicon carbide. J. Electron. Mater. 27(4), 335–341 (1998)
Kwon, O.H., Hayat, M.M., Wang, S., Campbell, J.C., Holmes, A., Pan, Y., Saleh, B.E.A., Teich, M.C.: Optimal excess noise reduction in thin heterojunction Al0.6Ga0.4As–GaAs avalanche photodiodes. IEEE J. Quantum Electron. 39(10), 1287–1296 (2003)
McIntyre, R.J.: Multiplication noise in uniform avalanche diodes. IEEE Trans. Electron Devices ED-13, 164–168 (1966)
Millan, J., Godignon, P., Perpiñà, X., Pérez-Tomás, A., Rebollo, J.: A survey of wide bandgap power semiconductor devices. IEEE Trans. Power Electron. 29(5), 2155–2163 (2014)
Monroy, E., Omnès, F., Calle, F.: Wide-bandgap semiconductor ultraviolet photodetectors. Semicond. Sci. Technol. 2(4), R33–R51 (2003)
Moresco, M., Bertazzi, F., Bellotti, E.: A full-band Monte Carlo study of gain, bandwidth and noise of GaN avalanche photodiodes. In: Numerical Simulation of Optoelectronic Devices (NUSOD), pp. 27–28 (2010)
Morkoç, H.: Handbook of Nitride Semiconductors and Devices, Volume 3, GaN-based Optical and Electronic Devices. Wiley (2009)
Okuto, Y., Crowell, C.R.: Threshold energy effect on avalanche breakdown voltage in semiconductor junctions. Solid Sate Electron. 18(2), 161–168 (1975)
Ooi, T.L.W., Cheang, P.L., You, A.H., Chan, Y.K.: Mean multiplication gain and excess noise factor of GaN and Al0.45Ga0.55N avalanche photodiodes. Eur. Phys. J. Appl. Phys. 92, 10301-p1-p7 (2020)
Plimmer, S.A., David, J.P.R., Ong, D.S., Li, K.F.: A simple model for avalanche multiplication including deadspace effects. IEEE Trans. Electron Dev. 46(4), 769–775 (1999)
Sampath, A.V., Zhou, Q., Enck, R., Gallinat, C.S., Shen, P., Campbell, J., Wraback, M.: Impact of hetero-interface on the photoresponse of GaN/SiC separate absorption and multiplication avalanche photodiodes. In: ISDRS (2011)
Sampath, A.V., Zhou, Q.G., Enck, R.W., McIntosh, D., Shen, H., Campbell, J.C., Wraback, M.: P-type interface charge control layers for enabling GaN/SiC separate absorption and multiplication avalanche photodiodes. Appl. Phys. Lett. 101, 093506-1-4 (2012)
Sang, L., Liao, M., Sumiya, M.: Review a comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures. Sensors 13, 10482–10518 (2013)
Su, L., Zhou, D., Lu, H., Zhang, R., Zheng, Y.: Recent progress of SiC UV single photon counting avalanche photodiodes. J. Semicond. 40, 121802-1-11 (2019)
Sun, C.C., You A.H., Wong, E.K.: Multiplication gain and excess noise factor in 4H-SiC APD. In: IEEE-ICSE2012 Proceedings, pp. 366–369 (2012)
Zhang, Y.: Comparison between competing requirements of GaN and SiC family of power switching devices. In: IOP Conference Series: Materials Science and Engineering, vol. 738, p. 012004-1-6 (2020)
Zhao, D.G., Jiang, D.S.: GaN based ultraviolet photodetectors. In: Park, J.W. (ed.) Photodiodes—World Activities in 2011. InTechOpen, Rijeka (2011)
Zhou, Q.G., McIntosh, D.C., Lu, Z.W., Campbell, J.C., Sampath, A.V., Shen, H.G., Wraback, M.: GaN/SiC avalanche photodiodes. Appl. Phys. Lett. 99, 131110-1-3 (2011)
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Cheang, P.L., Wong, E.K. & Teo, L.L. Multiplication width dependent avalanche characteristics in GaN/4H-SiC heterojunction avalanche photodiodes. Opt Quant Electron 53, 554 (2021). https://doi.org/10.1007/s11082-021-03213-2
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DOI: https://doi.org/10.1007/s11082-021-03213-2